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AFT05MS006NT1

Part No AFT05MS006NT1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 30V 520MHZ PLD  /  RF Mosfet LDMOS 7.5 V 100 mA 520MHz 18.3dB 6W PLD-1.5W
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Not For New Designs
Transistor Type LDMOS
Frequency 520MHz
Gain 18.3dB
Voltage - Test 7.5 V
Current - Test 100 mA
Power - Output 6W
Voltage - Rated 30 V
Package / Case PLD-1.5W
Supplier Device Package PLD-1.5W
Base Product Number AFT05
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names AFT05MS006NT1CT,AFT05MS006NT1DKR,935311718515,AFT05MS006NT1-ND,AFT05MS006NT1TR
Standard Package 1,000
Win Source Part Number 961954-AFT05MS006NT1
Ultra Librarian 3D Model Ultra Librarian AFT05MS006NT1 CAD Model

Description

Product Overview: AFT05MS006NT1

The AFT05MS006NT1 is a high-performance RF power transistor from NXP Semiconductors, designed to deliver exceptional power and efficiency. This device is part of NXP's product portfolio that caters to the demanding requirements of RF energy applications, including but not limited to, industrial, scientific, medical (ISM), broadcast, and aerospace sectors.

Key Features

  • Frequency Range: The AFT05MS006NT1 operates at a frequency range of 1.8-520 MHz, making it highly versatile for various RF applications.
  • Power Output: It boasts a high power output of 6 Watts, ensuring robust performance for a range of RF-powered systems.
  • Efficiency: Designed with energy efficiency in mind, this transistor achieves high efficiency, reducing the overall power consumption and heat dissipation in systems where it is deployed.
  • Robustness: The AFT05MS006NT1 is engineered for durability and can withstand a high voltage standing wave ratio (VSWR), which is a measure of how well the device can handle mismatched load conditions without performance degradation or failure.
  • Package: This RF power transistor is available in a plastic over-molded package, which provides excellent thermal performance and is suitable for high-volume manufacturing processes.

Applications

The versatility of the AFT05MS006NT1 allows it to be used in a wide array of applications. These include:

  • RF power amplifiers for ISM applications such as industrial heating, medical diathermy, and plasma generation.
  • Commercial and emergency broadcast transmitters.
  • Avionics systems, including HF and VHF communications.
  • RF power amplifiers for test and measurement equipment.

Why Choose the AFT05MS006NT1?

Choosing the AFT05MS006NT1 for your RF application means selecting a product that offers a balance of power, efficiency, and reliability. NXP's commitment to quality and performance ensures that this RF power transistor will meet the rigorous demands of high-performance RF systems, delivering consistent results and long-term reliability. Whether for commercial, industrial, or aerospace applications, the AFT05MS006NT1 provides the solution you need to power your RF systems effectively and efficiently.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1779 $50.0917
50+ $2.0374 $101.8700
77+ $1.9672 $151.4744
110+ $1.8267 $200.9370
143+ $1.7564 $251.1652
178+ $1.6862 $300.1436
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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