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AFT23H160-25SR3

Part No AFT23H160-25SR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description IC TRANS RF LDMOS  /  RF Mosfet LDMOS (Dual) 28 V 450 mA 2.3GHz 16.7dB 32W NI-880X-4L4S-8
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type LDMOS (Dual)
Frequency 2.3GHz
Gain 16.7dB
Voltage - Test 28 V
Current - Test 450 mA
Power - Output 32W
Voltage - Rated 65 V
Package / Case NI-880X-4L4S-8
Supplier Device Package NI-880X-4L4S-8
Base Product Number AFT23
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 935320681128
Standard Package 250
Win Source Part Number 1025889-AFT23H160-25SR3
Ultra Librarian 3D Model Ultra Librarian AFT23H160-25SR3 CAD Model

Description

The AFT23H160-25SR3 is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This robust transistor is specifically engineered to deliver outstanding performance in high-frequency applications, making it an ideal choice for a wide range of uses, including but not limited to RF energy, industrial, scientific, and medical (ISM) applications, as well as radio and TV broadcasting.

Key Features

  • High Efficiency: The AFT23H160-25SR3 boasts a high efficiency rating, which is crucial for applications requiring long-term operation and minimal energy waste.
  • Wide Frequency Range: With its broad frequency range, this transistor can be employed in various applications, ensuring versatility and adaptability in multiple RF solutions.
  • Durable Construction: NXP's commitment to quality is evident in the AFT23H160-25SR3's construction, which is built to withstand the rigors of demanding environments.
  • Thermal Performance: Exceptional thermal performance is a hallmark of this transistor, ensuring that it operates reliably even under high temperature conditions.
  • Integrated ESD Protection: Electrostatic discharge protection is integrated into the device, safeguarding it against sudden electrical spikes and enhancing its longevity.

Applications

The AFT23H160-25SR3 is versatile enough to be used in various high-power RF applications. Some of the most common applications include:

  • RF energy systems
  • ISM band applications
  • Commercial radio and TV broadcasting
  • High-power industrial processes
  • Medical applications such as MRI and RF ablation

Technical Specifications

The AFT23H160-25SR3 is designed with the following technical specifications:

  • Output Power: High output power to meet the demands of intensive applications.
  • Gain: Excellent gain characteristics for efficient signal amplification.
  • Efficiency: Optimized for maximum energy efficiency.
  • Frequency Range: Suitable for a wide range of frequencies.
  • Package: Delivered in a rugged package designed for easy integration into a variety of systems.

With its combination of performance, efficiency, and reliability, the AFT23H160-25SR3 from NXP Semiconductors is an excellent choice for designers and engineers looking to push the boundaries of what's possible with RF power technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $259.7015 $259.7015
2+ $232.8359 $465.6718
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