The BAS82 from NXP is a high-performance Schottky barrier diode designed to offer fast switching capabilities and low forward voltage drop. This diode is particularly well-suited for applications that require efficient power management and high-speed switching, making it an ideal choice for modern electronic circuits.

Key Features

• Low Forward Voltage Drop: The BAS82 provides a low forward voltage drop, which enhances system efficiency by minimizing power loss during operation.
• Fast Switching Speed: With its quick switching action, the BAS82 is capable of operating at high frequencies, making it suitable for high-speed applications.
• High Surge Current Capability: This diode can handle high surge currents, offering reliability and robustness in demanding conditions.
• Small Package Size: The BAS82 is available in a compact SOD-80C package, which is ideal for space-constrained applications.

Applications

The BAS82 is versatile and can be used in a wide array of applications, including:

• Power supply circuits
• DC-DC converters
• Voltage clamping
• Protection circuits
• Reverse polarity protection
• High-frequency inverters

Electrical Characteristics

Some of the notable electrical characteristics of the BAS82 include:

• Repetitive peak reverse voltage: 30 V
• Forward continuous current: 70 mA
• Non-repetitive peak forward surge current: 2 A
• Forward voltage at IF = 10 mA: 0.37 V (typical)
• Reverse current at VR = 25 V: 2 µA (maximum)

Quality and Reliability

NXP is known for its commitment to quality and the BAS82 is no exception. It is manufactured to meet high industry standards for performance and reliability, ensuring that it can withstand the rigors of everyday use in commercial and industrial environments.

Whether you are designing power management systems or looking to integrate fast switching diodes into your electronic designs, the BAS82 from NXP offers an optimal solution with its combination of efficiency, speed, and compact form factor.