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BC635-16,126

Part No BC635-16,126
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 1A TO92-3 / Bipolar (BJT) Transistor NPN 45 V 1 A 180MHz 830 mW Through Hole TO-92-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NXP USA Inc.
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
Power - Max 830 mW
Frequency - Transition 180MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number BC63
Standard Package 2,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1346043-BC635-16,126
Ultra Librarian 3D Model Ultra Librarian BC635-16,126 CAD Model

Description

The BC635-16,126 is a cutting-edge semiconductor device from NXP Semiconductors, a global leader in the development of secure connectivity solutions for embedded applications. This product is designed to cater to the demanding needs of modern electronics, providing a reliable and efficient performance for a wide range of applications.

Key Features

  • High Performance: The BC635-16,126 is built to deliver top-notch performance, ensuring that electronic devices operate at their best.
  • Low Power Consumption: With energy efficiency in mind, this product is engineered to minimize power consumption, making it ideal for battery-powered devices.
  • Durability: NXP's commitment to quality means that the BC635-16,126 is designed to withstand the rigors of everyday use, ensuring a long operational life.
  • Compact Design: The small footprint of the BC635-16,126 allows for its integration into space-constrained applications without compromising performance.

Applications

The versatility of the BC635-16,126 makes it suitable for a myriad of applications, including:

  • Industrial and automation systems
  • Automotive electronics
  • Consumer electronics such as smart devices
  • Communication infrastructure
  • Medical equipment

Technical Specifications

Parameter Value Package Type SOT-23 Transistor Polarity NPN Collector-Emitter Voltage VCEO Max 45 V DC Collector/Base Gain hfe Min 100 Operating Temperature Range -65°C to +150°C

Quality and Reliability

NXP Semiconductors is renowned for their strict quality control and rigorous testing procedures. The BC635-16,126 is no exception, and it has undergone extensive testing to meet the highest standards of quality and reliability expected by the industry.

Ordering Information

For purchasing and further information regarding the BC635-16,126, customers can contact NXP's authorized distributors or visit the official NXP website. The product is available for bulk orders and can be shipped globally subject to NXP's terms and conditions.

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