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BC857AT,115

Part No BC857AT,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.1A SC-75
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer NXP USA Inc.
Packaging Reel
Part Status Obsolete (End Of Life)
Transistor Type PNP
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 45V
Vce Saturation (Maximum) at Ib, Ic 400mV at 5mA, 100mA
Current - Collector Cutoff (Maximum) 15nA (ICBO)
DC Current Gain (hFE) (Min) at Ic, Vce 125 at 2mA, 5V
Power - Max 150mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package SC-75, SOT-416
Supplier Device Package SC-75
Part Number Series BC857A
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805225-BC857AT,115
Ultra Librarian 3D Model Ultra Librarian BC857AT,115 CAD Model

Description

The BC857AT,115 is a high-quality PNP general-purpose transistor manufactured by NXP Semiconductors, a leader in the electronic components industry. This transistor is designed for use in a wide range of applications, including amplification and switching operations in various electronic circuits. It is a versatile component that is well-suited for integration into modern electronics due to its low power consumption and excellent amplification characteristics.

Key Features

  • Transistor Type: PNP - This transistor type is designed for use in negative ground configurations, which is common in many electronic circuits.
  • Package / Case: SOT-23 - The BC857AT,115 comes in a small SOT-23 package, making it ideal for space-constrained applications.
  • Collector-Emitter Voltage (Vceo): 45V - This rating indicates the maximum voltage the transistor can tolerate between the collector and emitter without breaking down.
  • Collector Current (Ic): 100mA - The maximum continuous current that can flow through the collector of the transistor.
  • Power Dissipation (Pd): 250mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 100 to 600 - A measure of the transistor's ability to amplify the current, with a range indicating performance across various operating conditions.
  • Operating Temperature: -55°C to +150°C - The BC857AT,115 can operate reliably within a wide temperature range, making it suitable for harsh environments.

Applications

The BC857AT,115 transistor is commonly used in a variety of electronic applications. It is ideal for low-power amplification and switching applications, such as:

  • Signal processing
  • Power management
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BC857AT,115 is no exception. It is produced using high-quality materials and state-of-the-art manufacturing processes, ensuring reliable performance and longevity in all types of electronic equipment.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,945+ $0.0196 $57.7220
7,145+ $0.0162 $115.7490
10,715+ $0.0162 $173.5830
15,385+ $0.0150 $230.7750
19,235+ $0.0150 $288.5250
25,000+ $0.0139 $347.5000
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 2945 pcs
Order Increment : 1 pcs
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