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BF1201WR,115

Part No BF1201WR,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 10V 30MA SOT343R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity N-Channel Dual Gate
Frequency 400MHz
Gain 29dB
Voltage - Test 5V
Current Rating 30mA
Noise Figure 1dB
Current - Test 15mA
Voltage Rating 10V
Case / Package CMPAK-4
Win Source Part Number 097253-BF1201WR,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BF1201WR,115 CAD Model

Description

The NXP BF1201WR,115 is a high-performance, dual-gate N-channel enhancement-mode Field-Effect Transistor (FET) designed for a wide range of applications. This versatile component is housed in a compact leadless package, making it an excellent choice for space-constrained designs. The BF1201WR,115 is characterized by its low noise figure, high gain, and low power consumption, which are essential features for modern electronic circuits.

Key Features

  • High Frequency Performance: The device operates at a high frequency, making it suitable for VHF and UHF applications.
  • Dual-Gate Configuration: The dual-gate design allows for better control and flexibility in signal amplification and mixing.
  • Low Noise Figure: With its low noise figure, the BF1201WR,115 ensures clear signal amplification, which is crucial for communication and RF applications.
  • High Gain: The FET provides high gain, which enhances the signal strength and quality.
  • Low Power Consumption: It is optimized for low power consumption, making it ideal for battery-powered devices.
  • Leadless Package: The small and leadless SOT343 package allows for a reduced footprint on printed circuit boards (PCBs).

Applications

The NXP BF1201WR,115 is suitable for a variety of applications, including but not limited to:

  • RF amplifiers in mobile and wireless communication
  • Low-noise input stages for receivers
  • High-frequency oscillators
  • Mixers in RF circuits
  • IF amplifiers in TV and radio receivers
  • Satellite receiver applications

Technical Specifications

The BF1201WR,115 operates with a drain-source voltage (Vds) of 6 V, a continuous drain current (Id) of 30 mA, and features a gate-source voltage (Vgs) of ±8 V. Its low threshold voltage ensures that it can be driven by low-voltage logic signals, making it compatible with a wide range of control circuits.

Quality and Reliability

NXP is known for its commitment to quality and reliability, and the BF1201WR,115 is no exception. This product is designed to meet the stringent requirements of the electronics industry, ensuring stable performance over its intended lifespan.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $3.0065 $60.1300
47+ $2.4659 $115.8973
73+ $2.3897 $174.4481
100+ $2.3123 $231.2300
130+ $2.2349 $290.5370
173+ $2.0039 $346.6747
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,900 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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