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BF545C,215

Part No BF545C,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description JFET N-CH 30V 25MA SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Transistor Polarity N-Channel JFET
Current Rating 25mA
Voltage Rating 30V
Case / Package TO-236AB (SOT23)
Win Source Part Number 1023196-BF545C,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BF545C,215 CAD Model

Description

The BF545C,215 is a high-performance, small-signal NPN silicon RF (Radio Frequency) Bipolar Junction Transistor (BJT) designed and manufactured by NXP Semiconductors. This transistor is well-suited for a wide range of RF applications, including but not limited to VHF, UHF, and microwave frequencies. With its low noise figure and high gain, the BF545C,215 is an ideal choice for demanding RF amplification and switching applications.

Key Features

  • Frequency Range: The BF545C,215 operates efficiently across a broad frequency spectrum, making it versatile for various RF applications.
  • Low Noise Figure: It offers a low noise figure, which is essential for maintaining signal integrity in communication systems and sensitive RF circuits.
  • High Gain: With its high gain, the transistor can amplify weak RF signals without significant loss of quality, ensuring a strong and clear output.
  • High Transition Frequency (fT): The BF545C,215 boasts a high transition frequency, enabling it to handle high-speed signals effectively.
  • Robust Design: Encased in a SOT54 (TO-92) package, the BF545C,215 is designed for reliability and durability in various operating conditions.

Applications

The BF545C,215 transistor is commonly used in a range of applications that require high-quality RF amplification. These include:

  • RF front-end amplifiers in communication systems
  • Signal processing for satellite and terrestrial broadcast receivers
  • Low-noise input stages for RF power amplifiers
  • Oscillator circuits in microwave systems
  • Industrial and medical RF applications

Technical Specifications

Parameter Value Package Type SOT54 (TO-92) Transistor Polarity NPN Collector-Emitter Voltage (Vceo) 15V Collector Current (Ic) 30mA Power Dissipation (Pd) 300mW Transition Frequency (fT) High

The BF545C,215 from NXP is a testament to the company's commitment to providing high-quality components for advanced RF applications. Its combination of low noise performance, high gain, and robust packaging makes it a reliable choice for engineers and designers looking to build superior RF systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6944 $59.0240
205+ $0.5698 $116.8090
315+ $0.5520 $173.8800
435+ $0.5342 $232.3770
560+ $0.5164 $289.1840
750+ $0.4629 $347.1750
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Availability: 8,949 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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