The 2SB1166S is a high-performance PNP bipolar junction transistor (BJT) developed by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed to meet the needs of a wide range of electronic applications, offering reliable switching and amplification capabilities.

Key Features

• Transistor Polarity: PNP - Ideal for use as a switch or amplifier in a negative ground system.
• Collector-Emitter Voltage (VCEO): The 2SB1166S can withstand voltages up to 80V, making it suitable for medium voltage applications.
• Collector Current (IC): It can handle a continuous collector current of up to 1A, ensuring robust performance in high-power circuits.
• Power Dissipation (Pd): With a power dissipation of 900mW, this transistor can effectively handle the energy within the component without overheating.
• DC Current Gain (hFE): It boasts a high DC current gain, which ensures a high level of amplification, making it highly effective for signal processing applications.
• Package / Case: The device comes in a compact SOT-89 package, which is ideal for space-constrained applications while providing adequate thermal performance.

Applications

The ON Semiconductor 2SB1166S is versatile and can be used in various electronic circuits. Some common applications include:

• Power Management Circuits
• Audio Amplifiers
• Signal Processing
• Motor Control
• Switching Regulators

Quality and Reliability

ON Semiconductor is renowned for its commitment to quality, and the 2SB1166S is no exception. This transistor is manufactured with the highest standards, ensuring reliable performance and longevity in your electronic projects.

Environmental Compliance

The 2SB1166S adheres to environmental regulations, including RoHS compliance, reflecting ON Semiconductor's dedication to environmentally responsible manufacturing.