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BFU520YX

Part No BFU520YX
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description RF TRANS 2 NPN 12V 10GHZ SOT363 / RF Transistor 2 NPN (Dual) 12V 30mA 10GHz 450mW Surface Mount 6-TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer NXP USA Inc.
Packaging Reel - TR
Transistor Type 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.65dB @ 900MHz
Gain 19dB
Power - Max 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 8V
Current - Collector (Ic) (Max) 30mA
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number BFU520
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number BFU520Y,BFU520YX-ND,568-11508-6,568-11508-2,934067715115,568-11508-1
Standard Package 3,000
Win Source Part Number 1325017-BFU520YX
Ultra Librarian 3D Model Ultra Librarian BFU520YX CAD Model

Description

The BFU520YX is a high-performance NPN wideband silicon germanium RF transistor designed by NXP Semiconductors. This device is tailored for high-speed, low-noise applications in the RF front-end segment. The BFU520YX is an ideal choice for demanding applications such as satellite communication systems, mobile phones, GPS devices, and other sophisticated wireless communication systems.

Key Features

  • High Transition Frequency (fT): With a transition frequency of 25 GHz, the BFU520YX provides excellent performance for high-frequency applications, ensuring that signals are processed quickly and efficiently.
  • Low Noise Figure: The low noise figure of this transistor makes it suitable for use in noise-sensitive RF circuits, helping to maintain signal integrity and quality.
  • High Gain-Bandwidth Product: The high gain-bandwidth product allows the BFU520YX to amplify signals over a wide range of frequencies without significant loss of gain, making it versatile for various RF applications.
  • High Maximum Stable Gain (MSG): This feature ensures that the device can provide stable gain over a wide range of operating conditions, which is critical for maintaining consistent performance.
  • Robust Design: Manufactured with NXP's proven silicon germanium technology, the BFU520YX is designed to withstand the rigors of high-performance RF applications.

Applications

The BFU520YX is designed for a variety of applications, including but not limited to:

  • Low-noise amplifiers in cellular and cordless phones
  • Global Positioning System (GPS) receivers
  • Wireless LAN and Bluetooth applications
  • Satellite communication systems
  • Other RF front-end applications requiring high gain and low noise

Product Specifications

The BFU520YX transistor is housed in a small SOT343F plastic surface-mounted package, which is not only space-efficient but also allows for excellent thermal performance. The device operates within a wide temperature range, ensuring reliability across various environmental conditions.

For detailed technical specifications, application circuits, and additional information, customers are encouraged to consult the official NXP datasheets and product documentation available on the NXP Semiconductors website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6571 $59.1390
215+ $0.5392 $115.9280
335+ $0.5224 $175.0040
460+ $0.5056 $232.5760
595+ $0.4887 $290.7765
795+ $0.4381 $348.2895
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Availability: 124 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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