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BFU660F,115

Part No BFU660F,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description RF TRANS NPN 5.5V 21GHZ 4DFP  /  RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr NXP USA Inc.
Package Tape & Reel
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5.5V
Frequency - Transition 21GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain 12dB ~ 21dB
Power - Max 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 10mA, 2V
Current - Collector (Ic) (Max) 60mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-343F
Supplier Device Package 4-DFP
Base Product Number BFU660
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2156-BFU660F,115,NXPNXPBFU660F,115,568-8454-2,568-8454-1,BFU660F,115-ND,568-8454-6,BFU660F115,934064611115,954-BFU660F115
Standard Package 3,000
Win Source Part Number 959003-BFU660F,115
Ultra Librarian 3D Model Ultra Librarian BFU660F,115 CAD Model

Description

The BFU660F,115 is a cutting-edge RF transistor produced by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This product is designed to deliver exceptional performance in a wide range of applications that require high frequency and low noise operations.

The BFU660F,115 is part of the BFU6xx series of NPN wideband silicon germanium RF transistors. It boasts a transition frequency (fT) of 25 GHz, which ensures that it can handle high-speed signals with ease. This makes it an ideal choice for use in demanding RF applications such as satellite communication systems, cellular base stations, and professional mobile radio.

The device comes in a compact 4-pin, SOT343F (SC-70) surface-mount package, which minimizes its footprint on circuit boards and is suitable for high-density mounting. Its small size does not compromise its performance; the BFU660F,115 provides excellent thermal stability and reliability, thanks to its robust design and the use of high-quality materials.

One of the key features of this transistor is its low noise figure, which is typically 0.8 dB at 1 GHz. This characteristic is crucial for applications that require clear signal amplification with minimal distortion. The BFU660F,115 also offers high power gain, with a maximum gain of 23 dB at 2 GHz, allowing for efficient signal amplification in a variety of RF circuits.

The BFU660F,115 operates within a wide voltage range and can handle continuous collector currents up to 40 mA. This flexibility in operation makes it suitable for a variety of circuit designs and power levels. Additionally, the device is characterized for operation from -65°C to +150°C, ensuring reliable performance across a broad range of environmental conditions.

Overall, the BFU660F,115 from NXP Semiconductors is a high-quality RF transistor that offers superior performance for high-frequency applications. Its combination of low noise figure, high gain, and wideband capabilities make it a versatile and valuable component for engineers looking to design sophisticated RF systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5865 $52.7850
210+ $0.4813 $101.0730
325+ $0.4662 $151.5150
445+ $0.4512 $200.7840
575+ $0.4361 $250.7575
770+ $0.3910 $301.0700
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Availability: 11,400 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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