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MMBV2109LT1

Part No MMBV2109LT1
Manufacturer ON Semiconductor
Catalog Variable Capacitance Diodes (Varicaps, Varactors)
Description DIODE TUNING SS 30V SOT23
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Capacitance @ Vr, F 36.3pF @ 4V, 1MHz
Capacitance Ratio 3.2
Capacitance Ratio Condition C2/C30
Voltage - Peak Reverse (Max) 30V
Diode Type Single
Q @ Vr, F 200 @ 4V, 50MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 099755-MMBV2109LT1
Ultra Librarian 3D Model Ultra Librarian MMBV2109LT1 CAD Model

Description

The MMBV2109LT1 is a high-performance variable capacitance diode designed and manufactured by ON Semiconductor. This product is specifically engineered to provide precise tuning and filtering applications across a broad range of electronic devices. Its primary function is to allow designers to adjust the capacitance electronically by changing the reverse voltage, making it an ideal component for radio frequency (RF) and microwave circuits where fine-tuning is essential.

Key Features

  • High-Quality Silicon Epitaxial Planar Construction: The MMBV2109LT1 is built using a silicon epitaxial planar process that ensures a reliable and stable performance over various operating conditions.
  • High Capacitance Ratio: The device offers a high capacitance ratio, which is crucial for applications that require a wide range of capacitance adjustments.
  • Low Series Resistance: With its low series resistance, the MMBV2109LT1 ensures minimal power loss and higher efficiency in RF circuits.
  • Compact SOT-23 Package: The diode comes in a small SOT-23 package, making it suitable for space-constrained applications without compromising performance.

Applications

The MMBV2109LT1 is versatile and can be used in various applications, including:

  • Electronic Tuning in VCOs (Voltage-Controlled Oscillators)
  • RF and Microwave Signal Processing
  • Automotive Remote Tuning Circuits
  • Bandwidth Control in Filters
  • Mobile Communications Devices

Technical Specifications

Parameter Value Reverse Voltage 30 V Diode Capacitance 2.8 pF - 15 pF (Typical) Series Resistance 1.0 Ohm (Max at 50 MHz) Operating Temperature -55°C to +125°C Package Type SOT-23

ON Semiconductor's commitment to quality and performance is evident in the MMBV2109LT1, making it a reliable choice for professionals seeking precision and durability in their electronic designs.

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