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BLF4G22S-100

Part No BLF4G22S-100
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description UHF power LDMOS transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1153702-BLF4G22S-100
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BLF4G22S-100 CAD Model

Description

Overview of NXP's BLF4G22S-100 Power LDMOS Transistor

Introducing the BLF4G22S-100, a state-of-the-art LDMOS transistor from NXP Semiconductors, designed to deliver superior performance for a wide range of RF power applications. This rugged device is specifically engineered to provide high efficiency and reliability under the demanding conditions of professional RF power amplifiers.

Key Features

  • Frequency Range: The BLF4G22S-100 is optimized for broadband operations, covering a wide frequency range from 1.8 to 2.2 GHz, making it a versatile choice for various communication applications.
  • High Power: With an impressive output power of up to 100W, this LDMOS transistor can handle the requirements of high-power systems without compromising signal quality.
  • Efficiency: Designed with energy efficiency in mind, the BLF4G22S-100 boasts a high efficiency of up to 18% in Doherty applications, ensuring that systems operate with minimal power wastage.
  • Integrated ESD Protection: The device features integrated ESD protection, enhancing its robustness and ensuring a longer operational lifespan even in harsh environments.
  • Thermal Performance: Thanks to its excellent thermal characteristics, the BLF4G22S-100 maintains stability and performance even under high-temperature conditions.

Applications

The BLF4G22S-100 is ideal for various applications, including but not limited to:

  • Base station applications for mobile radio
  • Industrial, scientific, and medical (ISM) applications
  • Professional mobile radio
  • Broadcast transmitters
  • Aerospace and defense systems

Quality and Reliability

NXP's commitment to quality and reliability is evident in the BLF4G22S-100. Manufactured with precision and attention to detail, this LDMOS transistor meets the stringent requirements of professional and industrial applications. It is designed to withstand severe operating conditions while maintaining high performance, ensuring that your systems continue to operate at peak efficiency.

Whether you are developing a commercial base station or a specialized communication system, the BLF4G22S-100 from NXP offers the power, efficiency, and reliability required to drive your applications forward.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $75.7895 $75.7895
2+ $73.4211 $146.8422
3+ $71.0527 $213.1581
4+ $68.6843 $274.7372
5+ $61.5790 $307.8950
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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