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BLF7G22LS-130

Part No BLF7G22LS-130
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description Power LDMOS transistor
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer NXP
Win Source Part Number 1153776-BLF7G22LS-130
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BLF7G22LS-130 CAD Model

Description

NXP BLF7G22LS-130 LDMOS Power Transistor

The BLF7G22LS-130 is a high-performance LDMOS power transistor designed by NXP Semiconductors, a leader in innovative high-performance mixed-signal solutions. This product is specifically engineered to meet the rigorous demands of high-efficiency RF power amplifiers in a variety of applications, including broadcast transmitters, cellular base stations, and industrial, scientific, and medical (ISM) applications.

With a frequency range up to 2.2 GHz, the BLF7G22LS-130 is optimized for broadband operation, ensuring wide applicability and flexibility for system designers. This transistor is capable of delivering an impressive output power of 130 Watts, making it an excellent choice for applications that require a high power output with a compact footprint.

The device boasts a high gain of 17 dB, providing a significant amplification of the input signal, which is critical for maintaining signal integrity in transmission systems. Additionally, the high efficiency of up to 53% reduces the overall power consumption of the system, leading to cost savings and a reduced environmental impact over the product's lifespan.

The BLF7G22LS-130 is built with NXP's advanced LDMOS technology, which is renowned for its high ruggedness and reliability. This ensures the transistor can withstand extreme mismatched load conditions without suffering from catastrophic failures, a crucial feature for maintaining uptime in mission-critical applications.

Installation and integration are made easy thanks to the transistor's flangeless ceramic package, which not only simplifies the assembly process but also enhances thermal performance. The device is also characterized by its excellent thermal stability, which contributes to its long-term reliability even in high-temperature environments.

In summary, the BLF7G22LS-130 from NXP is a robust and reliable power transistor that offers high power, efficiency, and gain for a wide range of RF applications. Its advanced LDMOS technology ensures performance and durability, making it a trusted component for designers looking to build high-quality, enduring RF systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $116.5414 $116.5414
2+ $112.7820 $225.5640
3+ $109.0226 $327.0678
4+ $97.7444 $390.9776
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