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BLF7G24L-140112

Part No BLF7G24L-140112
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 65V 3-Pin LDMOST Blister
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 28 A
Current Rating 28 A
Drain to Source Breakdown Voltage 65 V
Drain to Source Voltage (Vdss) 65 V
Element Configuration Single
Frequency 2.4 GHz
Gain 18.5 dB
Gate to Source Voltage (Vgs) 13 V
Max Frequency 2.4 GHz
Maximum Operating Temperature 150 °C
Min Operating Temperature -65 °C
Mount Screw, Surface Mount
Number of Elements 1
Number of Pins 3
Output Power 30 W
RoHS Compliant
Test Current 1.3 A
Test Voltage 28 V
Voltage Rating 65 V
Win Source Part Number 1049349-BLF7G24L-140112
Categories Transistors - FETs, MOSFETs - RF
Manufacturer NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BLF7G24L-140112 CAD Model

Description

Introducing the NXP BLF7G24L-140112 RF Power LDMOS Transistor

The NXP BLF7G24L-140112 is a cutting-edge RF power LDMOS transistor that is engineered to deliver outstanding performance for a wide range of applications. This high-efficiency device is designed to operate at a frequency range of 2400 MHz to 2500 MHz, making it an ideal choice for applications in the ISM band, including RF heating, medical applications, and industrial, scientific, and medical (ISM) applications.

Key Features

  • High Efficiency: With an excellent efficiency of up to 60%, the BLF7G24L-140112 ensures optimal energy use, contributing to reduced operational costs and thermal management requirements.
  • High Gain: Offering a high gain of 14 dB, this LDMOS transistor amplifies RF signals effectively, ensuring strong and clear transmission for critical applications.
  • Robust Power Output: The device boasts a robust power output of 140 Watts CW, providing the necessary power to handle demanding applications.
  • Advanced LDMOS Technology: Utilizing the latest LDMOS technology, the BLF7G24L-140112 offers superior ruggedness and reliability, making it a durable choice for industrial environments.
  • Thermal Performance: Designed with a thermally-enhanced package, the transistor ensures excellent heat dissipation, maintaining performance even under high temperature operations.
  • Integrated ESD Protection: Built-in electrostatic discharge (ESD) protection safeguards the device from unexpected voltage spikes, enhancing its longevity.

Applications

The BLF7G24L-140112 is versatile and can be used in various applications that require high power and efficiency at 2.4 GHz. Its primary applications include:

  • Industrial heating and drying systems
  • Medical equipment such as MRI and RF ablation tools
  • Plasma generators
  • ISM band applications

Quality and Reliability

NXP is known for its commitment to quality, and the BLF7G24L-140112 is no exception. This device is manufactured to meet the highest industry standards, ensuring consistent performance and reliability for mission-critical applications. With its robust design and advanced features, the BLF7G24L-140112 stands out as a superior choice for professionals seeking a high-performance RF power solution.

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