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BSH112,235

Part No BSH112,235
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 300MA SOT-23
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 40pF @ 10V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 830mW (Tc)
Maximum Rds On at Id,Vgs 5 Ohm @ 500mA, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 096133-BSH112,235
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSH112,235 CAD Model

Description

The BSH112,235 is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) brought to you by NXP Semiconductors, a leader in smart connected solutions. This MOSFET is a testament to NXP's commitment to providing innovative and reliable components for a wide range of electronic applications.

Key Features

  • Low On-State Resistance: The BSH112,235 boasts an exceptionally low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at high frequencies, making it suitable for power management and conversion systems.
  • Low Threshold Voltage: The low threshold voltage ensures that the device can be driven at lower gate voltages, which is beneficial for battery-operated and low-power devices.
  • SOT23 Package: Encased in a compact SOT23 package, the BSH112,235 is ideal for space-constrained applications, without compromising on performance.
  • High-Temperature Operation: With an operating temperature range that accommodates extreme conditions, this MOSFET is reliable in various environments and applications.

Applications

The BSH112,235 is versatile and can be used in a multitude of applications. It is particularly well-suited for:

  • Load switching
  • Power management
  • DC-DC converters
  • Battery management systems
  • Motor control circuits
  • Portable electronic devices

Quality and Reliability

NXP's BSH112,235 is manufactured under the highest quality standards, ensuring that each component meets rigorous performance and reliability criteria. With NXP's reputation for quality, you can integrate the BSH112,235 into your designs with confidence, knowing that it will deliver consistent performance over its lifespan.

Environmental Compliance

NXP Semiconductors is committed to environmental sustainability. The BSH112,235 complies with various international standards for environmental safety and hazardous materials, making it a responsible choice for eco-conscious companies and consumers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
575+ $0.0874 $50.2550
1,395+ $0.0717 $100.0215
2,160+ $0.0695 $150.1200
2,980+ $0.0672 $200.2560
3,850+ $0.0650 $250.2500
5,150+ $0.0583 $300.2450
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 197,040 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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