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BSH205

Part No BSH205
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 12V 0.75A 3-Pin SOT-23 / MOSFET P-CH 20V 2A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 6.5nC @ 4.5V
Max Input Capacitance 418pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 480mW (Ta)
Maximum Rds On at Id,Vgs 170 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 83054-BSH205
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BSH205
Introduction Date August 01, 1998
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BSH205 CAD Model

Description

Product Overview: BSH205 from NXP

The BSH205, crafted by NXP Semiconductors, is a high-performance, P-channel TrenchMOS™ field-effect transistor designed for use in a variety of applications. This compact semiconductor device is renowned for its efficiency and reliability, offering a solution that is both power-conscious and space-saving.

With an emphasis on miniaturization without compromising performance, the BSH205 is housed in a small SOT23 package, making it an ideal choice for portable and space-constrained applications. Its low threshold voltage allows for operation at lower gate voltages, which significantly reduces power consumption and extends battery life in portable devices.

The BSH205 features a low on-state resistance (R<sub>DS(on)), which enhances overall system efficiency by minimizing conduction losses. This characteristic is particularly beneficial in power management circuits, where efficiency is paramount. The device is also characterized by fast switching speeds, which contribute to reduced switching losses and improved performance in high-frequency applications.

This MOSFET is designed to handle high surge currents without degradation, ensuring robust performance and long-term reliability. Its inherent thermal characteristics make it capable of operating over a wide temperature range, which is crucial for industrial and automotive environments that demand stability under varying thermal conditions.

The versatility of the BSH205 extends to its applications, which include load switch circuits, power management in portable devices, battery management systems, and other circuits where a high-efficiency P-channel MOSFET is required. Its compliance with RoHS directives also means that it meets current environmental standards, making it a responsible choice for eco-conscious manufacturers.

In summary, the BSH205 from NXP Semiconductors is a testament to the company's commitment to providing advanced, efficient, and reliable semiconductor solutions. Its combination of low power consumption, high-speed switching, and robust performance packaged in a compact form factor makes it a go-to component for designers looking to optimize their power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,440+ $0.0348 $50.1120
3,070+ $0.0326 $100.0820
4,765+ $0.0315 $150.0975
6,830+ $0.0293 $200.1190
8,870+ $0.0282 $250.1340
11,075+ $0.0271 $300.1325
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,000 pieces
MOQ: 1440 pcs
Order Increment : 1 pcs
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