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BUK652R0-30C,127

Part No BUK652R0-30C,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 120A TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 229nC @ 10V
Max Input Capacitance 14964pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 306W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025162-BUK652R0-30C,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUK652R0-30C,127 CAD Model

Description

Introducing the BUK652R0-30C,127 Power MOSFET by NXP Semiconductors

The BUK652R0-30C,127 is a high-performance Power MOSFET brought to you by NXP Semiconductors, a leader in the industry known for its innovative and reliable components. This particular MOSFET is designed to meet the demanding requirements of modern electronic circuits, offering a combination of low on-state resistance and high switching speed, making it an ideal choice for a wide range of power management applications.

Key Features

  • Low On-State Resistance: The BUK652R0-30C,127 boasts an extremely low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Switching Speed: With its fast switching capabilities, this MOSFET minimizes switching losses and is suitable for high-frequency power switching applications.
  • Advanced TrenchMOS Technology: Utilizing NXP's proprietary TrenchMOS technology, the BUK652R0-30C,127 offers superior performance by combining low threshold voltage with high energy efficiency.
  • High Current Capability: This component is capable of handling high currents, making it suitable for heavy-duty operations.
  • Robust Thermal Performance: The MOSFET's excellent thermal characteristics ensure reliable operation even under high temperature conditions.

Applications

The versatility of the BUK652R0-30C,127 allows it to be used in various applications including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switching regulators

Product Specifications

Below are the key specifications for the BUK652R0-30C,127:

  • Package: TO-220AB
  • Drain-source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 75A
  • Power Dissipation (P<sub>D): 110W
  • Operating Temperature Range: -55°C to +175°C

For designers and engineers looking for a robust and efficient power switching solution, the BUK652R0-30C,127 by NXP Semiconductors is an excellent choice. Its cutting-edge technology and strong performance parameters ensure that it can meet the needs of even the most demanding power applications.

Choose the BUK652R0-30C,127 for your next project to harness the power of NXP's advanced semiconductor technology and drive your designs towards greater efficiency and reliability.

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