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BUK653R7-30C,127

Part No BUK653R7-30C,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A TO220AB
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 4707pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025170-BUK653R7-30C,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUK653R7-30C,127 CAD Model

Description

Product Overview: BUK653R7-30C,127

The BUK653R7-30C,127 is a state-of-the-art power MOSFET manufactured by NXP Semiconductors, a leader in the industry known for its innovative and reliable components. This particular MOSFET is designed to deliver high-performance solutions for a wide range of applications, including but not limited to, automotive systems, power management, and industrial automation. With its robust design and cutting-edge technology, the BUK653R7-30C,127 is engineered to meet the stringent requirements of modern electronic circuits.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The device offers a very low on-state resistance, which translates into reduced conduction losses and improved overall efficiency, especially critical in power-intensive applications.
  • High-Speed Switching: With its fast switching capabilities, the BUK653R7-30C,127 ensures minimal transition losses, making it suitable for high-frequency operations.
  • Enhanced Thermal Performance: Designed with an optimal thermal management system, this MOSFET can operate reliably even under high-temperature conditions, ensuring a longer lifespan and stable performance.
  • Logic-Level Compatibility: It can be driven directly by logic-level voltages, which simplifies the design of control circuits and reduces the need for additional driver components.
  • Robust Package: Enclosed in a TO-220AB package, the BUK653R7-30C,127 offers a durable and reliable solution that can withstand harsh environments and mechanical stress.

Applications

The versatility of the BUK653R7-30C,127 makes it an ideal choice for a broad spectrum of applications. Its efficiency and reliability are particularly beneficial in:

  • Automotive applications such as engine control units, power distribution systems, and LED lighting.
  • Power supply modules, including DC-DC converters and voltage regulators.
  • Motor control circuits for industrial automation and robotics.
  • Switch-mode power supplies (SMPS) that demand efficient and fast switching.
  • Renewable energy systems, including solar inverters and wind turbine converters.

Conclusion

In conclusion, the BUK653R7-30C,127 from NXP Semiconductors exemplifies efficiency, reliability, and versatility. Its advanced features make it a prime choice for engineers and designers looking to enhance the performance of their power management systems. Whether in automotive, industrial, or renewable energy sectors, this power MOSFET stands out as a component that can drive innovation and ensure the smooth operation of electronic devices.

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