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BUK6E3R2-55C,127

Part No BUK6E3R2-55C,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description NEXPERIA BUK6E3R2-55C - 120A, 55 / N-Channel 55 V 120A (Tc) 306W (Tc) Through Hole I2PAK
Datasheet
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Rohs State Need to verify
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP Semiconductors
Series Automotive, AEC-Q101, TrenchMOS™
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 258 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 15300 pF @ 25 V
Power Dissipation (Max) 306W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1
MSL Level Vendor Undefined
REACH Status REACH Unaffected
Win Source Part Number 1346204-BUK6E3R2-55C,127
Ultra Librarian 3D Model Ultra Librarian BUK6E3R2-55C,127 CAD Model

Description

The BUK6E3R2-55C,127 is a high-performance PowerMOS transistor designed and manufactured by NXP Semiconductors, a leader in the field of advanced secure connectivity solutions. This product is part of NXP's extensive portfolio of semiconductor components that are widely used in automotive, industrial, and consumer electronics applications.

Key Features

  • Low On-State Resistance: The BUK6E3R2-55C,127 boasts an exceptionally low on-state resistance, which ensures efficient power handling and minimizes losses during operation.
  • High-Speed Switching: Designed for fast switching applications, this transistor is capable of operating at high frequencies, which makes it ideal for modern, high-speed circuit designs.
  • Robust Thermal Performance: With an excellent thermal design, the BUK6E3R2-55C,127 can dissipate heat effectively, maintaining stability and reliability even under high temperature conditions.
  • Logic Level Compatible: This device is compatible with 5V logic levels, allowing for direct interfacing with microcontrollers and other logic devices without the need for additional level-shifting components.

Applications

The versatile nature of the BUK6E3R2-55C,127 makes it suitable for a wide range of applications, including but not limited to:

  • DC/DC converters
  • Motor control circuits
  • Power management systems
  • Automotive applications
  • Switch-mode power supplies (SMPS)

Product Specifications

The BUK6E3R2-55C,127 is encapsulated in a TO-220 package, ensuring compatibility with a variety of PCB layouts and easy integration into existing designs. Its key electrical characteristics include a drain-source voltage (Vds) of 55V, a continuous drain current (Id) of 75A, and a gate threshold voltage (Vgs th) that makes it suitable for logic level applications.

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The BUK6E3R2-55C,127 is no exception, having undergone rigorous testing to ensure its performance under a wide range of conditions. Customers can trust this component to deliver consistent performance and longevity in their electronic designs.

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