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BUK7107-55AIE

Part No BUK7107-55AIE
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 116nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-426
Dimension TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Win Source Part Number 201626-BUK7107-55AIE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK7107-55AIE CAD Model

Description

The BUK7107-55AIE is a state-of-the-art N-channel TrenchMOS standard level FET designed and manufactured by NXP Semiconductors, a leader in the industry known for its high-quality and innovative components. This particular Field Effect Transistor is part of NXP's extensive product line that caters to a wide range of electronic applications, from automotive to industrial systems.

Key Features

  • Voltage Rating: The device boasts a drain-source voltage (V<sub>DS) of 55V, making it suitable for a variety of mid-range voltage applications.
  • Current Capacity: With a continuous drain current (I<sub>D) of 75A, this FET can handle significant power, making it ideal for high-performance circuits.
  • Low On-Resistance: The BUK7107-55AIE offers an exceptionally low on-state resistance (R<sub>DS(on)) of just 7 mΩ, which enhances its efficiency by minimizing power losses during operation.
  • High-Speed Switching: Designed for fast switching, this component provides improved performance in applications that require rapid state changes.
  • Gate Charge: It features a low gate charge (Q<sub>G), which contributes to the reduced switching losses and improved overall efficiency.

Applications

The versatility of the BUK7107-55AIE makes it an excellent choice for a variety of applications, including:

  • DC/DC converters and DC motor drives
  • Power management systems
  • Automotive applications and controllers
  • Switching regulators
  • Synchronous rectification for power supplies

Quality and Reliability

NXP Semiconductors ensures that the BUK7107-55AIE meets the highest standards of quality and reliability. The product is rigorously tested to withstand harsh conditions and is compliant with industry-standard certifications. This makes it a reliable choice for designers and engineers looking for components that promise longevity and consistent performance in their electronic designs.

Overall, the BUK7107-55AIE from NXP is a robust and efficient solution for a multitude of power switching applications. Its advanced features and proven performance make it a preferred choice for professionals seeking to enhance their electronic products with top-tier components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9268 $63.4144
18+ $6.5050 $117.0900
28+ $6.3017 $176.4476
38+ $6.0984 $231.7392
49+ $5.8951 $288.8599
66+ $5.2853 $348.8298
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Availability: 1,670 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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