The BUK7210-55B is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is well-suited for a wide range of applications, particularly in the automotive industry, where it is often utilized for its efficiency and reliability in high-power and high-temperature environments.
Key Features
- Low On-State Resistance: The BUK7210-55B boasts a very low on-state resistance (RDS(on)), which means it has minimal power loss when conducting. This feature ensures high efficiency in power management applications.
- High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for applications that require rapid transitions between on and off states, such as switching regulators and motor control circuits.
- Standard Level Gate Drive: The device operates with standard level gate drive voltages, making it compatible with a wide range of drive circuits and simplifying the design of the power stage.
- Thermal Performance: The BUK7210-55B is encapsulated in a plastic package with high thermal performance, ensuring the device remains operational even under high temperature stress.
- Automotive Qualified: This product meets the stringent requirements for automotive applications, signifying its robustness and reliability.
Applications
The BUK7210-55B is versatile and can be used in various applications, including:
- Automotive systems such as engine control units, power steering, and DC/DC converters
- Motor drives and inverter systems
- Power supply units
- Load switches
Technical Specifications
| Parameter |
Value |
| Drain-source voltage (VDS) |
55 V |
| Continuous drain current (ID) |
75 A |
| Power dissipation (PD) |
200 W |
| Operating temperature range |
-55°C to +175°C |
With its robust design and excellent performance characteristics, the BUK7210-55B from NXP is a reliable choice for designers looking to optimize power efficiency and thermal management in their applications.