The BUK7626-100B,118 is a high-performance, N-channel TrenchMOS™ standard level FET manufactured by NXP Semiconductors, renowned for their innovative and reliable semiconductor solutions. This particular field-effect transistor (FET) is designed to deliver efficient power management and signal processing in a wide range of applications, making it a versatile component in modern electronics.

Key Features

• Low On-State Resistance: The device boasts an exceptionally low on-state resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation.
• High-Speed Switching: With its fast switching capabilities, the BUK7626-100B,118 is ideal for high-frequency applications, ensuring minimal delay and high performance.
• Standard Level Gate Drive: The FET operates with a standard level gate drive, making it compatible with a wide range of control circuits and reducing the need for additional level-shifting components.
• Robust Thermal Performance: Engineered for reliability, the device can handle significant thermal stress, ensuring stable operation even under high temperature conditions.

Applications

The BUK7626-100B,118 is suitable for various applications, including but not limited to:

• DC/DC converters
• Motor drives
• Power management systems
• Switching regulators
• Automotive systems

Product Specifications

Quality and Reliability

NXP Semiconductors is committed to the highest standards of quality and reliability. The BUK7626-100B,118 is subjected to rigorous testing and quality control procedures, ensuring that each component meets the stringent requirements necessary for industrial and automotive applications.

Environmental Compliance

The BUK7626-100B,118 is RoHS compliant and free from environmentally hazardous substances, aligning with global efforts to reduce the environmental impact of electronic components.