The BUK7675-55A is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is well-suited for a wide range of applications, particularly in the automotive industry, where reliability and efficiency are of paramount importance.

Key Features

• Low On-State Resistance: The BUK7675-55A boasts a very low on-state resistance (R_DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
• High Continuous Current Rating: With the ability to handle a high continuous current, this MOSFET is ideal for high-power applications requiring robust current handling capabilities.
• Standard Level Gate Drive: Its standard level gate drive allows for compatibility with a wide range of existing control circuits, simplifying the design process for engineers.
• Robust Thermal Performance: The device is encapsulated in a TO-220 package, which provides excellent thermal conduction and heat dissipation, ensuring stable performance even under high temperature operating conditions.

Applications

The BUK7675-55A is versatile and can be used in various applications, including:

• Automotive systems such as engine control units, power steering, and braking systems
• DC/DC converters and power management modules
• Motor drives and controllers
• Switch-mode power supplies (SMPS)

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable components. The BUK7675-55A is no exception, undergoing rigorous testing to ensure it meets the stringent requirements of the automotive industry, including AEC-Q101 standards for automotive reliability.

Environmental Compliance

The BUK7675-55A is also designed with environmental considerations in mind. It is compliant with RoHS regulations, which restrict the use of certain hazardous substances in electronic equipment, making it a more environmentally friendly choice for manufacturers looking to reduce their ecological footprint.