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BUK7C06-40AITE,118

Part No BUK7C06-40AITE,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4300pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 125693-BUK7C06-40AITE,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK7C06-40AITE,118 CAD Model

Description

Introducing the BUK7C06-40AITE,118 from NXP Semiconductors

The BUK7C06-40AITE,118 is a cutting-edge TrenchMOS™ standard level FET designed and manufactured by NXP Semiconductors, a leader in the industry known for their high-performance semiconductor products. This particular MOSFET is part of the NXP Power MOSFET portfolio and is engineered to deliver outstanding performance with a focus on energy efficiency and reliability.

Key Features

  • Low On-State Resistance: The BUK7C06-40AITE,118 boasts a low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency, making it ideal for a wide range of power management applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is well-suited for high-frequency operations, thereby enhancing the performance of power converters and inverters.
  • Enhanced Thermal Performance: The device is housed in a TO-220 package, known for its excellent thermal characteristics, ensuring the MOSFET operates reliably even under high power and temperature conditions.
  • Standard Level Gate Drive: This feature makes the BUK7C06-40AITE,118 compatible with a wide range of drive circuits, allowing for flexible design options for engineers.
  • Automotive Grade: As an AEC-Q101 qualified component, it meets the stringent requirements of automotive applications, ensuring robustness and durability in harsh environments.

Applications

The versatility of the BUK7C06-40AITE,118 allows it to be used in various applications, including but not limited to:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive systems
  • Switch Mode Power Supplies (SMPS)

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The BUK7C06-40AITE,118 is no exception, with its robust construction and rigorous testing ensuring that it performs consistently over its intended lifespan, even under challenging conditions.

In summary, the BUK7C06-40AITE,118 MOSFET from NXP is a high-performance solution for designers looking to optimize their power management systems with an efficient, reliable, and versatile component.

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