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BUK7C1R2-40EJ

Part No BUK7C1R2-40EJ
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V D2PAK-7 / N-Channel 40 V Surface Mount D2PAK-7
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number BUK7C1
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346183-BUK7C1R2-40EJ
Ultra Librarian 3D Model Ultra Librarian BUK7C1R2-40EJ CAD Model

Description

Introducing the BUK7C1R2-40EJ Power MOSFET by NXP

The BUK7C1R2-40EJ is a state-of-the-art Power MOSFET device designed and manufactured by NXP Semiconductors, an industry leader in the field of high-performance mixed-signal electronics. This particular component is part of NXP's extensive portfolio of TrenchMOS™ technology, which is renowned for providing low on-state resistance and high switching performance, making it ideal for a wide range of power management applications.

The BUK7C1R2-40EJ operates at a drain-source voltage (VDS) of 40V, with a continuous drain current (ID) of 1.2A at 25°C. This makes it perfectly suited for use in automotive systems, DC-DC converters, and power management circuits where efficiency and reliability are critical. Its low threshold voltage ensures that it can be driven at lower gate voltages, reducing power consumption and heat generation.

This Power MOSFET features a single n-channel TrenchMOS transistor, which is encapsulated in a compact LFPAK56 (Power-SO8) package. The innovative leadless package design not only saves space on the PCB but also enhances thermal performance and improves reliability through its solid copper clip construction. The BUK7C1R2-40EJ's design ensures a low thermal resistance path from the die to the PCB, helping to maintain optimal performance even under high-switching frequency or high ambient temperature conditions.

With its integrated ESD protection, the BUK7C1R2-40EJ is robust against electrostatic discharge events, thus safeguarding the MOSFET during handling and operation. This feature is particularly important in the automotive industry, where components are required to meet stringent ESD immunity standards.

NXP's commitment to quality is evident in the BUK7C1R2-40EJ, which is AEC-Q101 qualified, signifying its compliance with the highest automotive reliability standards. Whether it's for engine control units, body control modules, or in-vehicle networking, the BUK7C1R2-40EJ is an excellent choice for designers looking for a reliable, high-performance Power MOSFET that doesn't compromise on efficiency or space.

Overall, the BUK7C1R2-40EJ by NXP is a testament to the company's dedication to providing advanced solutions for power management challenges in the automotive sector and beyond.

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