The BUK7K5R6-30E,115 is a high-performance, N-channel TrenchMOS™ standard level Field-Effect Transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is built using advanced TrenchMOS silicon technology, which provides superior performance in terms of switching speed, thermal characteristics, and overall efficiency.

With a drain-source voltage of 30V and a continuous drain current of 75A, the BUK7K5R6-30E,115 is capable of handling high-power applications with ease. Its low threshold voltage ensures that the device can be driven at lower gate voltages, making it suitable for a wide range of circuits and applications.

This component is housed in a compact, surface-mount DPAK package, which is not only space-saving but also offers improved thermal performance. The package is designed for use in automated manufacturing processes, and its rugged design ensures reliability even under demanding conditions.

Key Features:

• Drain-source voltage (V<sub>DS): 30V
• Continuous drain current (I<sub>D): 75A
• Low on-state resistance (R<sub>DS(on))
• Fast switching speed
• Low threshold voltage
• Standard level gate drive
• DPAK (TO-252) surface-mount package

Applications:

The BUK7K5R6-30E,115 is a versatile component that can be used in a variety of applications. It is particularly well-suited for use in:

• Switching regulators
• DC-DC converters
• Motor control circuits
• Power management systems
• Automotive applications
• High-efficiency power supplies

With its combination of high current capability, low on-state resistance, and fast switching speeds, the BUK7K5R6-30E,115 is an ideal choice for designers looking to improve efficiency and thermal performance in their power circuit designs.