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BUK9275-100A,118

Part No BUK9275-100A,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 21.7A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 21.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 72 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 129383-BUK9275-100A,118
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUK9275-100A,118 CAD Model

Description

    

The BUK9275-100A,118 is a high-performance, N-channel TrenchMOS™ standard level FET manufactured by NXP Semiconductors, a leader in the field of high-quality semiconductor products. This power MOSFET is designed to deliver efficient power management and conversion in a compact package, making it an ideal choice for a wide range of applications.

  

Key Features

  
        
  • Low On-State Resistance: The device features a low on-state resistance (RDS(on)), which minimizes conduction losses and enhances the overall efficiency of the system in which it is used.
  •     
  • High-Speed Switching: BUK9275-100A,118 is capable of high-speed switching, which is essential for applications requiring fast response times and efficient power regulation.
  •     
  • Standard Level Gate Drive: This MOSFET operates with standard level gate drives, providing compatibility with a wide range of drive circuits and simplifying design integration.
  •     
  • Robust Thermal Performance: The product is encapsulated in a DPAK package, which offers excellent thermal performance and helps to maintain stability even under high temperature operating conditions.
  •   
  

Applications

  

The versatility of the BUK9275-100A,118 allows it to be used in various applications, including:

  
        
  • DC-to-DC converters
  •     
  • Motor drives
  •     
  • Power management systems
  •     
  • Automotive applications
  •     
  • Switching regulators
  •     
  • Load switches
  •   
  

Product Specifications

            Parameter      Value              Drain-Source Voltage (VDS)      100V              Continuous Drain Current (ID)      75A              Power Dissipation (PD)      110W              Operating Temperature Range      -55°C to +175°C        

Overall, the BUK9275-100A,118 MOSFET from NXP Semiconductors is a reliable and efficient solution for power switching and management tasks in both industrial and automotive environments. Its robust design ensures long-term reliability, making it a preferred choice for engineers and designers looking for a high-quality power MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,300 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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