The BUK96180-100A,118 is a high-performance N-channel TrenchMOS™ standard level field-effect transistor (FET) manufactured by NXP Semiconductors. This power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, particularly in automotive and industrial sectors. Its standard level gate drive makes it compatible with a variety of drive circuits and controllers.

Key Features

• Low On-State Resistance: The device features a low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency during operation.
• High Continuous Current: With a continuous drain current (I<sub>D) of 100A, the BUK96180-100A,118 is capable of handling high current loads, making it suitable for demanding applications.
• High-Speed Switching: The fast switching speed of this MOSFET enables efficient operation in high-frequency circuits, contributing to overall system performance.
• Robust Thermal Performance: The device's excellent thermal characteristics ensure reliable performance even under high temperature operating conditions.
• Automotive Qualified: Meeting the stringent requirements of the automotive industry, this product is AEC-Q101 qualified, indicating its suitability for automotive applications.

Applications

The BUK96180-100A,118 is ideal for a variety of applications, including but not limited to:

• Automotive systems such as engine control units, power steering, and DC/DC converters
• Motor drives and controllers in industrial automation
• Power management circuits
• Switch-mode power supplies (SMPS)
• Load switching and battery management systems

Technical Specifications

The BUK96180-100A,118 by NXP Semiconductors is a testament to the company's commitment to providing robust, high-quality components for the most demanding environments and applications.