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BUK9907-55ATE

Part No BUK9907-55ATE
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 108nC @ 5V
Max Input Capacitance 5836pF @ 25V
Maximum Gate-Source Voltage ±15V
FET Feature Temperature Sensing Diode
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-5
Dimension TO-220-5
Win Source Part Number 039747-BUK9907-55ATE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9907-55ATE CAD Model

Description

The BUK9907-55ATE is a high-performance, N-channel TrenchMOS™ standard level FET manufactured by NXP Semiconductors, a leader in the field of high-quality automotive and electronic components. This power MOSFET is designed to deliver efficient power conversion with low on-state resistance and high switching speeds, making it an ideal choice for a wide range of applications, including automotive systems, power management circuits, and high-efficiency power supplies.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The BUK9907-55ATE boasts an exceptionally low on-state resistance, which minimizes conduction losses and enhances overall efficiency, especially in high-current applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is able to handle high frequency operations with ease, reducing switching losses and improving performance in power conversion systems.
  • Standard Level Gate Drive: The device operates with standard level gate drive voltages, making it compatible with a wide range of existing control circuits and simplifying the design process for engineers.
  • Robust Thermal Performance: The BUK9907-55ATE is encapsulated in a TO-220 package, known for its excellent thermal conduction properties, ensuring the device remains cool even under high power operation conditions.
  • Automotive Grade: As an AEC-Q101 qualified component, this MOSFET meets the stringent requirements of the automotive industry, offering enhanced reliability and performance under harsh operating conditions.

Applications

The versatility of the BUK9907-55ATE makes it suitable for a broad array of applications, particularly where power efficiency and reliability are of utmost importance. Common applications include:

  • DC/DC converters
  • Motor drives
  • Automotive systems such as Electric Power Steering (EPS) and LED lighting
  • Switch-mode power supplies (SMPS)
  • Load switching applications

With its combination of low on-state resistance, high-speed switching, and robust thermal performance, the BUK9907-55ATE from NXP Semiconductors is a go-to MOSFET for designers seeking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0778 $62.3340
70+ $1.7048 $119.3360
105+ $1.6517 $173.4285
145+ $1.5985 $231.7825
190+ $1.5454 $293.6260
255+ $1.3848 $353.1240
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,210 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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