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BUK9E04-30B

Part No BUK9E04-30B
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 56nC @ 5V
Max Input Capacitance 6526pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 254W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 039748-BUK9E04-30B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9E04-30B CAD Model

Description

Introducing the BUK9E04-30B Power MOSFET by NXP Semiconductors

The BUK9E04-30B is a cutting-edge Power MOSFET device from the renowned semiconductor manufacturer, NXP. This component is designed to deliver high-efficiency and reliability for a wide range of applications, including automotive systems, power management, and industrial automation. With its robust construction and advanced technology, the BUK9E04-30B is an ideal choice for engineers and designers looking to enhance their power control systems.

Key Features of the BUK9E04-30B

  • Low On-State Resistance: The BUK9E04-30B boasts an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power applications.
  • High Continuous Current: This MOSFET is capable of handling a high continuous drain current, allowing it to support demanding power loads without compromising performance.
  • Enhanced Thermal Performance: With its optimized thermal design, the BUK9E04-30B ensures superior heat dissipation, which is crucial for maintaining stability and longevity in high-power and high-temperature environments.
  • Logic Level Gate Drive: The device can be driven at logic level voltages, making it compatible with modern microcontrollers and reducing the need for additional driver circuitry.

Applications

The versatility of the BUK9E04-30B allows it to be used in various applications, such as:

  • Automotive applications including engine control units, LED lighting, and powertrain systems.
  • DC-DC converters, which benefit from the MOSFET's efficiency and thermal performance.
  • Motor control circuits, where the high current capability and fast switching speeds are essential.
  • Power supplies, where the BUK9E04-30B contributes to stable and efficient operation.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BUK9E04-30B is no exception. This product is manufactured to meet the highest industry standards, ensuring reliable performance even under the most demanding conditions. With its robust design and advanced manufacturing techniques, the BUK9E04-30B is a product you can trust for your critical power management needs.

Whether you're designing for the automotive industry, industrial automation, or any application requiring efficient power control, the BUK9E04-30B from NXP is a powerful solution that offers both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.8565 $75.4260
8+ $15.4724 $123.7792
12+ $14.9884 $179.8608
16+ $14.5056 $232.0896
21+ $14.0217 $294.4557
28+ $12.5710 $351.9880
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,260 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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