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BUK9E06-55A

Part No BUK9E06-55A
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 8600pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 039749-BUK9E06-55A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUK9E06-55A CAD Model

Description

The NXP BUK9E06-55A is a state-of-the-art, high-efficiency Power-SO8 MOSFET designed for a wide range of applications. This product stands out due to its excellent thermal performance and low on-state resistance, making it a reliable choice for power management tasks.

Key Features

  • Low On-State Resistance: The BUK9E06-55A boasts an extremely low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Continuous Current Rating: With a continuous current rating of 55A, this MOSFET can handle high current loads, making it suitable for demanding environments.
  • High-Speed Switching: Designed for fast switching applications, the BUK9E06-55A ensures minimal switching losses, which is essential for applications such as DC-DC converters, motor control, and power supplies.
  • Enhanced Thermal Performance: The product's Power-SO8 package is optimized for superior thermal performance, ensuring reliability and longevity even under high-temperature operating conditions.
  • Logic Level Gate Drive: The MOSFET can be driven directly from low-voltage logic signals, which simplifies the design of control circuits and reduces the need for additional level-shifting components.

Applications

The BUK9E06-55A MOSFET is versatile and can be used in a variety of applications including:

  • Automotive systems
  • DC-DC converters
  • Motor control circuits
  • Power management modules
  • Load switches
  • Synchronous rectification

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BUK9E06-55A is no exception. This product is manufactured to meet the highest industry standards for performance and reliability, ensuring that it can withstand the rigors of real-world applications.

Environmental Compliance

The BUK9E06-55A is compliant with RoHS and other environmental directives, reflecting NXP's dedication to environmental sustainability and the reduction of harmful substances in electronic components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2285 $51.2555
55+ $1.8286 $100.5730
85+ $1.7714 $150.5690
117+ $1.7143 $200.5731
151+ $1.6571 $250.2221
202+ $1.4857 $300.1114
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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