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BUK9E3R7-60E,127

Part No BUK9E3R7-60E,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A I2PAK / N-Channel 60 V 120A (Tc) 293W (Tc) Through Hole I2PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 13490 pF @ 25 V
Power Dissipation (Max) 293W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number BUK9
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346186-BUK9E3R7-60E,127
Ultra Librarian 3D Model Ultra Librarian BUK9E3R7-60E,127 CAD Model

Description

Introducing the BUK9E3R7-60E,127 Power MOSFET by NXP Semiconductors

The BUK9E3R7-60E,127 is a cutting-edge power MOSFET designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance component is engineered to meet the rigorous demands of modern electronic applications, offering a perfect blend of efficiency, reliability, and power density.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low on-resistance (RDS(on)) of just 3.7 mΩ, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Continuous Drain Current: With a robust continuous drain current (ID) of 60 A, this MOSFET can handle high current loads, making it suitable for demanding power supply and motor control circuits.
  • 60V Drain-Source Voltage: The 60V rating for the drain-source voltage (VDS) allows for a wide range of applications in automotive, industrial, and consumer electronics where intermediate voltage operation is required.
  • Low Gate Charge: The device features a low gate charge (Qg), which enhances the switching performance and reduces switching losses, critical for high-frequency power converters and inverters.
  • Advanced Packaging: The BUK9E3R7-60E,127 comes in a compact LFPAK56 (Power-SO8) package, which not only saves space on the PCB but also offers excellent thermal performance for better reliability.

Applications

The versatility of the BUK9E3R7-60E,127 MOSFET makes it an ideal choice for a wide array of applications. It is particularly well-suited for:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switching regulators
  • Power tool controls

With its exceptional performance characteristics, the BUK9E3R7-60E,127 from NXP Semiconductors is designed to enhance the efficiency and durability of electronic systems. Whether you're developing power supplies, motor controllers, or any high-performance power electronics, this MOSFET is engineered to deliver top-notch performance and reliability.

Quality and Sustainability

NXP Semiconductors is committed to providing high-quality products while maintaining environmental sustainability. The BUK9E3R7-60E,127 is produced with this commitment in mind, ensuring that you receive a product that not only meets your performance criteria but also aligns with green manufacturing practices.

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