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BUK9Y9R9-80E,115

Part No BUK9Y9R9-80E,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V LFPAK56 PWR-SO8 / N-Channel 80 V Surface Mount LFPAK56, Power-SO8
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number BUK9Y9
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346192-BUK9Y9R9-80E,115
Ultra Librarian 3D Model Ultra Librarian BUK9Y9R9-80E,115 CAD Model

Description

Product Overview: BUK9Y9R9-80E,115

The BUK9Y9R9-80E,115 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors, a leader in the technology industry. This FET is part of NXP's extensive portfolio of Power MOSFETs that are known for their efficiency, reliability, and thermal performance.

Key Features

  • Low On-State Resistance: The BUK9Y9R9-80E,115 boasts an exceptionally low on-state resistance (RDS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High-Speed Switching: Engineered for fast switching, this MOSFET is suitable for high-frequency applications, contributing to better performance in power conversion and management tasks.
  • Standard Level Gate Drive: This product is compatible with standard level gate drive voltages, making it easily integrable with a wide range of drive circuits and control systems.
  • Robust Thermal Management: The BUK9Y9R9-80E,115 is encapsulated in a plastic package which is designed for improved heat dissipation, ensuring stable performance even under high temperature conditions.
  • High Continuous Current: With a capability to handle high continuous drain currents (ID), this device can be used in applications requiring high power density and robust current handling.

Applications

The versatility of the BUK9Y9R9-80E,115 makes it suitable for a wide range of applications, including but not limited to:

  • DC/DC converters
  • Power management circuits
  • Motor drives
  • Automotive applications
  • Switching regulators

Product Specifications

The BUK9Y9R9-80E,115 operates with a drain-source voltage (VDS) of up to 80V, and a continuous drain current (ID) of 9.9A. Its low threshold voltage ensures that it can be driven at lower voltages, while the package type, LFPAK56, provides a compact footprint along with excellent thermal characteristics.

Quality and Reliability

As with all NXP products, the BUK9Y9R9-80E,115 is manufactured to the highest quality standards, ensuring that it meets the stringent requirements of industrial and automotive grade applications. Customers can rely on this MOSFET for consistent performance and durability in their electronic designs.

For detailed technical specifications, application notes, and support documentation, customers are encouraged to visit the official NXP Semiconductors website or contact their sales and support team.

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