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BUK9Y58-75B,115

Part No BUK9Y58-75B,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 20.73A LFPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 20.73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 10.7nC @ 5V
Max Input Capacitance 1137pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 60.4W (Tc)
Maximum Rds On at Id,Vgs 53 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 140205-BUK9Y58-75B,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUK9Y58-75B,115 CAD Model

Description

Product Overview: BUK9Y58-75B,115

The BUK9Y58-75B,115 is a high-performance, N-channel TrenchMOS™ standard level FET from NXP Semiconductors, renowned for its efficiency and reliability. This power MOSFET is designed to deliver optimal performance in a wide range of applications, from automotive to industrial systems. With its compact and durable package, it offers an excellent solution for space-constrained environments.

Key Features

  • Low On-State Resistance: The device boasts a low on-state resistance (R<sub>DS(on)), which enhances its overall efficiency by minimizing conductive losses.
  • High-Speed Switching: It is capable of high-speed switching operations, which makes it suitable for high-frequency applications.
  • Standard Level Gate Drive: The BUK9Y58-75B,115 is compatible with standard level gate drives, enabling easy integration into existing designs without the need for gate drive modifications.
  • Robust Thermal Performance: The device's excellent thermal characteristics ensure reliable operation even under high temperature conditions.
  • Automotive Grade: Qualified according to AEC-Q101 standards, this MOSFET is suitable for automotive applications, adhering to the strict quality and reliability requirements of the automotive industry.

Applications

The versatility of the BUK9Y58-75B,115 allows it to be used in a variety of applications, including but not limited to:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications such as engine control units, headlights, and body electronics

Product Specifications

The BUK9Y58-75B,115 operates at a standard level gate drive, with a drain-source voltage (V<sub>DS) of 75V and a continuous drain current (I<sub>D) of 58A. Its power dissipation (P<sub>D) is substantial, ensuring that it can handle significant energy without overheating. The device comes in a compact package, which is not only space-efficient but also provides excellent power density.

Quality and Support

NXP Semiconductors is committed to providing high-quality products and the BUK9Y58-75B,115 is no exception. Customers can expect robust support and a comprehensive warranty, ensuring peace of mind and reliability for critical applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7794 $58.4550
160+ $0.7292 $116.6720
250+ $0.7040 $176.0000
355+ $0.6537 $232.0635
460+ $0.6286 $289.1560
575+ $0.6035 $347.0125
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,800 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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