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MD7P19130HSR3

Part No MD7P19130HSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description RF Power Field Effect Transistors | FET RF 2CH 65V 1.99GHZ NI780HS-4
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tape and Reel
Status Obsolete
Transistor Type LDMOS (Dual)
Frequency 1.99GHz
Gain 20dB
Voltage - Test 28V
Current - Test 1.25A
Power - Output 40W
Voltage - Rated 65V
Manufacturer Package NI-780S-4
Supplier Device Package NI-780S-4
Family Part Number MD7P19130
Manufacturer Pack Quantity 250
MSL Level 3 (168 Hours)
Win Source Part Number 1221450-MD7P19130HSR3
Manufacturer Homepage www.freescale.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MD7P19130HSR3 CAD Model

Description

Introducing the MD7P19130HSR3 Power Transistor

The MD7P19130HSR3 is a state-of-the-art power transistor meticulously engineered by NXP Semiconductors, a leader in the realm of high-performance mixed-signal electronics. This device is specifically designed for high power applications that demand reliability, efficiency, and superior thermal performance.

Key Features

  • High Frequency Operation: The MD7P19130HSR3 operates at a high frequency, making it an ideal choice for RF energy applications, including RF heating, plasma generation, medical, and industrial, scientific, and medical (ISM) applications.
  • Advanced LDMOS Technology: Leveraging NXP's latest LDMOS technology, the transistor provides excellent thermal stability and high gain, ensuring consistent performance even under strenuous conditions.
  • Robust Power Output: With an impressive output power level, this transistor can handle the demands of high-power circuits, making it a versatile component for various high-power density applications.
  • High Efficiency: Efficiency is paramount in power applications, and the MD7P19130HSR3 does not disappoint. Its design ensures minimal power loss, which translates to cost savings and reduced heat generation.
  • Enhanced Ruggedness: The device is engineered to withstand severe load mismatch conditions, granting it superior ruggedness that is critical in industrial environments.

Applications

The versatility of the MD7P19130HSR3 allows it to be used across a multitude of applications where power, efficiency, and reliability are required. It is particularly well-suited for:

  • RF power amplifiers for broadcast transmitters
  • Industrial heating and welding systems
  • Medical applications such as MRI and RF ablation
  • ISM band applications

Product Specifications

The MD7P19130HSR3 boasts impressive specifications that underscore its performance capabilities:

  • Frequency Range: Designed to operate efficiently over a broad frequency range.
  • Power Gain: High power gain is achieved through NXP's advanced semiconductor technology.
  • Thermal Management: Superior thermal characteristics ensure reliable operation even in high-temperature environments.
  • Package: Packaged in a robust and compact form factor, facilitating easy integration into various system designs.

With its robust design, advanced technology, and versatile application range, the MD7P19130HSR3 from NXP is a compelling choice for designers seeking a high-performance power transistor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $104.3797 $104.3797
2+ $101.0128 $202.0256
3+ $97.6460 $292.9380
4+ $87.5444 $350.1776
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Availability: 1,500 pieces
Order Increment : 1 pcs
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