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MMG30271BT1

Part No MMG30271BT1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC RF AMP 900MHZ-4.3GHZ SOT89-3
Sample
Rohs State rohs
ECAD Module
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Categories RF/IF and RFID
Estimated Pruduction Lead Time 25 Weeks
Features RF Amplifier IC - 900MHz ~ 4.3GHz SOT-89-3
Manufacturer NXP
Package Reel - TR
Mounting Surface Mount
Package TO-243AA
Case / Package SOT-89-3
Family Name MMG30271
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.31.0001
Other Part Number MMG30271BT1-ND, 568-13888-6, 935320806147, 568-13888-2, 568-13888-1
Quantity per package 1000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 885386-MMG30271BT1
Ultra Librarian 3D Model Ultra Librarian MMG30271BT1 CAD Model

Description

The NXP MMG30271BT1 is a state-of-the-art RF power LDMOS transistor designed to deliver exceptional performance for a wide range of applications. This high-efficiency device is part of NXP's advanced RF power transistor lineup and is engineered to meet the rigorous demands of today's wireless communications systems. With its robust construction and cutting-edge technology, the MMG30271BT1 is an ideal choice for RF power amplifiers in applications such as cellular base stations, broadcast transmitters, and industrial, scientific, and medical (ISM) applications.

Key Features

  • Frequency Range: The MMG30271BT1 operates effectively over a broad frequency range, making it versatile for various RF applications.
  • High Power: It is capable of delivering high output power, which is essential for applications that require strong signal amplification.
  • High Gain: The transistor provides high gain, which translates to better signal quality and less power required to achieve the desired level of amplification.
  • Efficiency: Designed with efficiency in mind, the MMG30271BT1 ensures lower operational costs and reduced thermal footprints.
  • Thermal Performance: Excellent thermal performance is achieved through advanced packaging, which helps maintain reliability and longevity under high-stress conditions.
  • Integrated ESD Protection: The device includes built-in electrostatic discharge (ESD) protection features to safeguard against unexpected voltage spikes.

Applications

  • Cellular base station amplifiers for GSM, CDMA, WCDMA, LTE, and other communication standards.
  • Broadcast transmitters for radio and television.
  • Industrial, scientific, and medical (ISM) applications, including RF heating and plasma generation.
  • Professional mobile radio and aerospace and defense systems requiring high-power RF solutions.

The NXP MMG30271BT1 is not only a testament to NXP's commitment to providing advanced RF components but also an essential building block for any system that requires high-performance RF amplification. With its exceptional features and versatile applications, the MMG30271BT1 is a top choice for engineers and designers looking to push the boundaries of RF power technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.8586 $57.8790
32+ $3.6098 $115.5136
50+ $3.4853 $174.2650
72+ $3.2363 $233.0136
93+ $3.1118 $289.3974
116+ $2.9874 $346.5384
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,200 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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