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MMRF1004GNR1

Part No MMRF1004GNR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 2.17GHZ TO270G-2 / RF Mosfet 28 V 130 mA 2.17GHz 15.5dB 10W TO-270-2 GULL
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Technology LDMOS
Frequency 2.17GHz
Gain 15.5dB
Voltage - Test 28 V
Current - Test 130 mA
Power - Output 10W
Voltage - Rated 68 V
Mounting Type Surface Mount
Package / Case TO-270BA
Supplier Device Package TO-270-2 GULL
Base Product Number MMRF1004
Standard Package 500
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1345936-MMRF1004GNR1
Ultra Librarian 3D Model Ultra Librarian MMRF1004GNR1 CAD Model

Description

Product Overview: MMRF1004GNR1

The MMRF1004GNR1 is a state-of-the-art RF power transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This device is part of NXP's RF power LDMOS transistor family and is specifically engineered to deliver outstanding performance in RF energy applications.

Key Features

  • Frequency Range: The transistor operates at a frequency range of 1.8-400 MHz, making it versatile for a wide array of RF applications, including but not limited to industrial, scientific, and medical (ISM) applications.
  • High Power Output: With an exceptional output power of 1250 W CW, the MMRF1004GNR1 is capable of delivering the power needed for demanding applications that require a high level of signal amplification.
  • High Efficiency: The device boasts high efficiency, which is critical for systems that require long-term operation without excessive heat generation or energy waste.
  • Integrated ESD Protection: Electrostatic discharge (ESD) protection is built into the MMRF1004GNR1 to ensure robustness and reliability, safeguarding the device from unexpected voltage spikes.
  • Thermally Enhanced Package: Housed in an over-molded plastic package, the transistor is designed for excellent thermal performance, ensuring stability and longevity under high-temperature operating conditions.

Applications

The MMRF1004GNR1 is ideal for a variety of applications that require high RF power. It is commonly used in RF energy applications such as plasma generation, cooking, lighting, and heating. Its robust design also makes it suitable for use in RF power amplifiers for broadcast, industrial, and military communications systems.

Quality and Reliability

NXP's commitment to quality and reliability is evident in the MMRF1004GNR1. The device is designed to meet the rigorous standards required by professional and industrial applications. Its long operational life and consistent performance make it a preferred choice for designers and engineers seeking a reliable RF power solution.

For detailed technical specifications, application notes, and support documentation, interested parties are encouraged to visit NXP Semiconductors' official website or contact their local NXP sales office.

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