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MMRF1012NR1

Part No MMRF1012NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 120V 220MHZ / RF Mosfet 50 V 30 mA 220MHz 23.9dB 10W TO-270-2
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 220MHz
Gain 23.9dB
Voltage - Test 50 V
Current - Test 30 mA
Power - Output 10W
Voltage - Rated 120 V
Mounting Type Surface Mount
Package / Case TO-270-2
Supplier Device Package TO-270-2
Base Product Number MMRF1
Standard Package 500
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1346003-MMRF1012NR1
Ultra Librarian 3D Model Ultra Librarian MMRF1012NR1 CAD Model

Description

Product Overview: NXP MMRF1012NR1 RF Power LDMOS Transistor

The NXP MMRF1012NR1 is a high-performance RF power LDMOS transistor designed for broadband commercial and industrial applications. Operating at a frequency range of 1.8 to 600 MHz, this device is capable of delivering exceptional output power and efficiency, making it an ideal choice for applications such as RF power amplifiers in broadcast transmitters, industrial lasers and plasma generators, as well as medical and scientific RF sources.

Key Features

  • Wide Frequency Range: This LDMOS transistor operates efficiently across a broad spectrum from 1.8 to 600 MHz, ensuring versatility in various RF applications.
  • High Output Power: With an excellent output power of 1250 W CW, the MMRF1012NR1 is capable of driving high-power circuits, making it suitable for demanding environments.
  • High Gain: It offers a high gain of 21.3 dB, which translates to better signal amplification and overall performance of the end application.
  • Superb Efficiency: The device boasts an efficiency of up to 75%, ensuring minimal energy loss and reduced operational costs in the long term.
  • Integrated ESD Protection: The MMRF1012NR1 includes integrated ESD protection, enhancing its durability and reliability in various working conditions.
  • Thermally Enhanced Package: It is housed in a thermally enhanced package, which supports excellent thermal stability and extends the lifespan of the device.

Applications

  • Broadcast transmitters for radio and television
  • Industrial, scientific, and medical (ISM) applications
  • RF energy applications like plasma generation, cooking, and heating
  • High-power laser excitation

Technical Specifications

The MMRF1012NR1 is designed with advanced LDMOS technology, providing a drain-source voltage (Vds) of 50V. The device also features an integrated dual-sided ESD protection system with a human body model rating of 1 kV. Its impedance is internally matched to 50 ohms, simplifying circuit design and reducing external component requirements.

For detailed technical specifications, application support, and additional resources, please refer to the official NXP product datasheet and support documentation.

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