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MMRF1021NT1

Part No MMRF1021NT1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 30V 870MHZ PLD1.5W / RF Mosfet 7.5 V 100 mA 870MHz 15.2dB 7.3W PLD-1.5W
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 870MHz
Gain 15.2dB
Voltage - Test 7.5 V
Current - Test 100 mA
Power - Output 7.3W
Voltage - Rated 30 V
Mounting Type Surface Mount
Package / Case PLD-1.5W
Supplier Device Package PLD-1.5W
Base Product Number MMRF1
Standard Package 1,000
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1345942-MMRF1021NT1
Ultra Librarian 3D Model Ultra Librarian MMRF1021NT1 CAD Model

Description

The MMRF1021NT1 is a high-performance RF power transistor from NXP Semiconductors, designed to deliver exceptional power and efficiency for a wide range of applications. This device is part of NXP's RF power LDMOS transistor family and is specifically engineered to meet the demanding requirements of high-power radio frequency (RF) amplification.

Key Features

  • Frequency Range: The MMRF1021NT1 operates effectively over a broad frequency range, making it versatile for various applications, including but not limited to broadcast, aerospace, and mobile radios.
  • High Output Power: With an impressive output power capability, this transistor is capable of delivering significant RF power, which is essential for high-power amplifiers.
  • High Gain: The device offers high gain figures, which translates to better signal amplification and improved overall performance of the RF system.
  • Efficiency: The MMRF1021NT1 is designed for high efficiency, reducing power loss and improving heat dissipation, which is crucial for maintaining the longevity and reliability of the device.
  • Thermal Performance: Enhanced thermal performance is achieved through NXP's advanced LDMOS technology, ensuring stable operation even under high-temperature conditions.
  • Ruggedness: Its rugged design makes it resilient against mismatched load conditions, which is particularly important in environments where antenna performance may be unpredictable.

Applications

The MMRF1021NT1 is suitable for a variety of applications that require robust and efficient high-power RF amplification. Its main applications include, but are not limited to:

  • Industrial, scientific, and medical (ISM) applications
  • RF energy applications
  • Commercial aerospace and defense systems
  • Broadcast transmitters
  • Mobile radio base stations

Product Specifications

The MMRF1021NT1 is offered in a ceramic package that provides excellent mechanical stability and thermal conductance. It's designed to operate at 28 volts, with a typical CW performance of 960 MHz. The transistor is also characterized by its ease of integration into various circuit designs, thanks to its simple and efficient input and output matching.

With its combination of performance, reliability, and versatility, the MMRF1021NT1 from NXP is an excellent choice for designers and engineers looking to enhance their RF power capabilities.

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