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MMRF2011NT1

Part No MMRF2011NT1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description SINGLE W-CDMA RF LDMOS WIDEBAND / RF Mosfet 728MHz ~ 960MHz 1.6W 24-PQFN-EP (8x8)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 728MHz ~ 960MHz
Power - Output 1.6W
Voltage - Rated 28 V
Mounting Type Surface Mount
Package / Case 24-PowerQFN
Supplier Device Package 24-PQFN-EP (8x8)
Base Product Number MMRF2
Standard Package 1,000
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1345934-MMRF2011NT1
Ultra Librarian 3D Model Ultra Librarian MMRF2011NT1 CAD Model

Description

Product Overview: MMRF2011NT1 RF Power Transistor

The MMRF2011NT1 is a high-performance RF power transistor from the reputable semiconductor manufacturer, NXP Semiconductors. Designed to deliver exceptional power and efficiency, this device is a perfect fit for a wide range of applications, including commercial, aerospace, and defense communication systems.

Key Features

  • Frequency Range: The MMRF2011NT1 operates at a frequency range of 1.8 to 2.0 GHz, making it ideal for various RF applications such as amplifiers in cellular base stations.
  • High Output Power: It is capable of delivering a high output power of 70 Watts CW, ensuring strong signal transmission and reliable performance in demanding environments.
  • High Gain: With a high gain of 18 dB, this transistor amplifies RF signals effectively, maintaining clarity and strength over long distances.
  • Efficiency: The device boasts an excellent efficiency of 48%, which helps in reducing power loss and improving overall system performance.
  • Integrated ESD Protection: The MMRF2011NT1 comes with built-in electrostatic discharge (ESD) protection, safeguarding the device from unexpected voltage spikes and enhancing its durability.
  • Ruggedness: This transistor demonstrates exceptional ruggedness, capable of withstanding a VSWR of 10:1 at 32 V, which speaks to its ability to handle mismatched load conditions without performance degradation.

Applications

  • Base station applications for cellular communication
  • RF power amplifiers for aerospace and defense systems
  • Industrial, scientific, and medical (ISM) applications
  • High-frequency RF power generation

Quality and Reliability

NXP's MMRF2011NT1 is manufactured to meet the highest quality and reliability standards. It is housed in a thermally-enhanced, over-molded plastic package that ensures optimal heat dissipation and long-term reliability. With its robust construction and adherence to stringent industry specifications, this RF power transistor is engineered to perform consistently in even the most challenging conditions.

Conclusion

Whether for commercial cellular networks or mission-critical aerospace and defense communication systems, the MMRF2011NT1 from NXP stands out as a superior choice for designers seeking a reliable and efficient RF power solution. Its combination of power, efficiency, and ruggedness makes it a versatile component in the advancement of high-frequency communication technologies.

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