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MMRF5018HSR5

Part No MMRF5018HSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description AIRFAST RF POWER GAN TRANSISTOR, / RF Mosfet 1MHz ~ 2.7GHz 17.3dB 125W NI-400S-2SA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Frequency 1MHz ~ 2.7GHz
Gain 17.3dB
Power - Output 125W
Voltage - Rated 125 V
Mounting Type Surface Mount
Package / Case NI-400S-2SA
Supplier Device Package NI-400S-2SA
Standard Package 50
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349490-MMRF5018HSR5
Ultra Librarian 3D Model Ultra Librarian MMRF5018HSR5 CAD Model

Description

Introducing the NXP MMRF5018HSR5 RF Power LDMOS Transistor

The NXP MMRF5018HSR5 is a high-performance RF power LDMOS transistor designed for a broad range of applications, including but not limited to broadcast, industrial, medical, and radio and VHF TV broadcast. This robust transistor is part of NXP's advanced product lineup, offering exceptional performance and reliability for demanding high-power applications.

Key Features

  • Wide Frequency Range: The MMRF5018HSR5 operates efficiently over a wide frequency range, making it versatile for various applications.
  • High Power Output: With a high output power capability, this LDMOS transistor can deliver up to 1800 Watts CW over the 470-806 MHz range, ensuring strong signal transmission for broadcast and communication systems.
  • High Efficiency: The device is engineered to provide high efficiency, which translates into lower operational costs and reduced cooling requirements for systems.
  • Integrated ESD Protection: Electrostatic discharge protection is built into the device, safeguarding it against unexpected voltage spikes and enhancing its durability and longevity.
  • Excellent Thermal Stability: The MMRF5018HSR5 is designed with excellent thermal characteristics, ensuring stable performance even under varying temperature conditions.

Applications

The MMRF5018HSR5's robust design and high-power output make it suitable for a variety of applications, including:

  • Industrial, Scientific, and Medical (ISM) applications where reliable, high-power transmission is required.
  • Professional broadcast equipment for both radio and television, ensuring clear and powerful signal delivery.
  • RF energy applications, including plasma generation, laser excitation, and particle accelerators.

Product Specifications

The MMRF5018HSR5 has been engineered with the following specifications:

  • Frequency Range: 470-806 MHz
  • Output Power: 1800 Watts CW
  • Supply Voltage: 50 Volts
  • Gain: 22 dB
  • Efficiency: 36%

With its combination of power, efficiency, and versatility, the NXP MMRF5018HSR5 is an ideal choice for designers and engineers looking for a reliable and high-performing RF power solution. Its advanced features ensure it meets the stringent requirements of today's high-power RF applications.

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