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MPS3906,126

Part No MPS3906,126
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.1A TO92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 500mW
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 1079516-MPS3906,126
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian MPS3906,126 CAD Model

Description

The MPS3906,126 is a high-quality bipolar junction transistor (BJT) from NXP Semiconductors, renowned for its reliability and performance in a wide range of electronic applications. This PNP transistor is designed for general-purpose amplification and switching tasks, making it a versatile component for designers and engineers.

Key Features

  • PNP Transistor: The MPS3906,126 is a PNP transistor, which means it is designed to allow current flow when a small negative base current is applied, making it suitable for use in positive ground configurations.
  • General Purpose: With its general-purpose designation, this transistor can be employed in various circuit applications, including amplifiers, switches, and signal processing.
  • High Voltage Tolerance: It is capable of handling moderate voltage levels, which ensures stable operation in circuits that experience voltage fluctuations.
  • TO-92 Package: Enclosed in a TO-92 package, the MPS3906,126 is lightweight, small in size, and easy to install, making it a practical choice for space-constrained applications.

Applications

The MPS3906,126 is suitable for a myriad of applications including, but not limited to:

  • Audio amplifiers and pre-amplifiers
  • Signal processing circuits
  • Switching circuits
  • Linear amplification tasks

Technical Specifications

Parameter Value Transistor Polarity PNP Collector-Emitter Voltage (VCEO) 40V Collector-Base Voltage (VCBO) 40V Emitter-Base Voltage (VEBO) 5V Collector Current (IC) 200mA Power Dissipation (Pd) 625mW DC Current Gain (hFE) 30 to 300 Operating Temperature Range -55°C to +150°C

With its robust design and flexible utility, the MPS3906,126 from NXP Semiconductors is an excellent choice for professionals seeking a dependable PNP transistor for their electronic designs.

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