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MRF1570FNT1

Part No MRF1570FNT1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 40V 470MHZ TO272-8 / Trans RF MOSFET N-CH 40V 9-Pin TO-272 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Transistor Type LDMOS
Frequency 470MHz
Gain 11.5dB
Voltage - Test 12.5V
Current - Test 800mA
Power - Output 70W
Voltage Rating DC 40V
Package TO-272-8
Manufacturer Package TO-272-8 Flat Lead
Win Source Part Number 789395-MRF1570FNT1
Popularity Medium
Supply and Demand Status Limited
Family Name MRF1570FN
Introduction Date May 29, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF1570FNT1 CAD Model

Description

Product Overview: MRF1570FNT1 - NXP

The MRF1570FNT1 is a high-performance, N-channel lateral MOSFET RF power transistor from the renowned semiconductor manufacturer, NXP Semiconductors. This device is specifically designed to deliver outstanding performance in broadcast applications, including FM radio broadcast transmitters and VHF TV broadcast amplifiers. With its robust construction and advanced technology, the MRF1570FNT1 is an ideal choice for professional broadcast and industrial applications where reliability and efficiency are critical.

Key Features:

  • Frequency Range: The transistor operates effectively within the 30-512 MHz range, making it versatile for various RF applications.
  • High Output Power: It is capable of delivering up to 70 Watts of continuous wave power, ensuring strong signal transmission for broadcast applications.
  • High Gain: With a power gain of 18 dB, the MRF1570FNT1 ensures amplified signal strength, which is essential for long-range communication.
  • High Efficiency: The device boasts an efficiency of up to 60%, reducing energy consumption and heat generation, which is crucial for maintaining the longevity of the device.
  • Integrated ESD Protection: Built-in electrostatic discharge protection safeguards the transistor against sudden voltage spikes, ensuring device stability and reliability.
  • Thermal Performance: The excellent thermal performance of the MRF1570FNT1 is attributed to its advanced package design, which aids in heat dissipation and allows for stable operation under varying conditions.
  • Ruggedness: Engineered for toughness, this transistor can withstand a mismatched load VSWR of 10:1, which is a testament to its durability and resilience in demanding environments.

Applications:

The MRF1570FNT1 is not just limited to broadcast; its high-frequency performance and power capabilities make it suitable for a variety of RF power applications. This includes two-way radio, amateur radio, aerospace, and defense communication systems where consistent and reliable RF power is necessary.

With the MRF1570FNT1, NXP Semiconductors continues to deliver components that push the boundaries of RF power technology, offering solutions that enhance performance and reliability for a wide array of RF applications.

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