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MRF1K50HR5

Part No MRF1K50HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description HIGH POWER RF TRANSISTOR  /  RF Mosfet LDMOS 1.8MHz ~ 500MHz 22.5dB 1500W NI-1230-4H
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel
Transistor Type LDMOS
Frequency 1.8MHz ~ 500MHz
Gain 22.5dB
Power - Output 1500W
Voltage - Rated 50 V
Package / Case SOT-979A
Supplier Device Package NI-1230-4H
Base Product Number MRF1K50
RoHS Status RoHS non-compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names MRF1K50HR5DKR,MRF1K50HR5TR-ND,MRF1K50HR5CT,935313284178,MRF1K50HR5TR,MRF1K50HR5DKR-ND,568-13350-6,568-13350-1,MRF1K50HR5CT-ND,568-13350-2
Standard Package 50
Win Source Part Number 1028372-MRF1K50HR5
Ultra Librarian 3D Model Ultra Librarian MRF1K50HR5 CAD Model

Description

Product Overview: MRF1K50HR5

The MRF1K50HR5 is a high-power, high-performance transistor designed and manufactured by NXP Semiconductors, a renowned leader in the electronics industry. This advanced LDMOS transistor is specifically engineered for a broad range of applications, including but not limited to, RF power amplifiers in industrial, scientific, medical (ISM) applications, broadcast, aerospace, mobile radio, and high-fidelity audio systems.

Key Features

  • High Output Power: The MRF1K50HR5 boasts an impressive output power of 1.5 kW over a broad frequency range, making it suitable for demanding applications that require high power density.
  • Wide Frequency Range: This transistor operates efficiently across a wide frequency range of 1.8 to 500 MHz, catering to various communication bands and enabling versatility in its use.
  • High Efficiency: With an advanced design that focuses on energy efficiency, the MRF1K50HR5 offers a typical efficiency of 74% in industrial, scientific, and medical applications, ensuring optimal performance with reduced energy waste.
  • Robustness: The device is characterized by its ruggedness and is capable of withstanding a high voltage standing wave ratio (VSWR) of 65:1 at 50 V, which is critical for applications that may experience load mismatch.

Applications

The MRF1K50HR5's versatility allows it to be used in a wide array of applications. It is particularly well-suited for use in high-power RF amplifiers, including plasma generators, MRI systems, laser excitation, and particle accelerators. Additionally, it is an excellent choice for RF energy applications, offering a reliable and efficient solution for heating and physical or chemical processes.

Product Specifications

Constructed with NXP's advanced LDMOS technology, the MRF1K50HR5 is housed in a ceramic package that provides excellent thermal stability and durability. The transistor is designed for ease of integration into a wide range of systems, with a compact form factor that does not compromise on power or performance. With its exceptional power output, efficiency, and frequency range, the MRF1K50HR5 is a top-tier component for designers looking to enhance their high-power RF systems.

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