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MRF5S9070NR1

Part No MRF5S9070NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 880MHZ TO-270-2 / Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 880MHz
Gain 17.8dB
Voltage - Test 26V
Current - Test 600mA
Power - Output 14W
Voltage Rating DC 68V
Package TO-270AA
Manufacturer Package TO-270-2
Win Source Part Number 789434-MRF5S9070NR1
Popularity Medium
Supply and Demand Status Limited
Family Name MRF5S9070N
Introduction Date January 27, 2004
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF5S9070NR1 CAD Model

Description

The MRF5S9070NR1 is a high-performance RF power transistor designed and manufactured by NXP Semiconductors. This device is a part of NXP's renowned RF MOSFETs product line, which is well-regarded for its reliability, efficiency, and cutting-edge technology. The MRF5S9070NR1 is specifically engineered to meet the demanding requirements of high-power RF applications, including commercial and industrial RF power amplifiers.

Key Features

  • Frequency Range: This transistor operates at a frequency range of 860-960 MHz, making it ideal for applications in the UHF band, particularly for GSM and CDMA cellular systems.
  • Output Power: It boasts a high output power of 70 Watts CW, ensuring robust performance for high-power applications.
  • Gain: The MRF5S9070NR1 offers a high gain of 18 dB, which allows for efficient signal amplification.
  • Efficiency: With an efficiency of 35%, it provides a balanced performance between power output and energy consumption.
  • Integrated ESD Protection: The device includes built-in ESD protection, enhancing its durability and reliability in harsh environments.
  • Thermally Enhanced Package: It comes in a thermally-enhanced package that ensures optimal heat dissipation, contributing to its longevity and stable operation under various temperature conditions.

Applications

The MRF5S9070NR1 is suitable for a wide range of applications, including but not limited to:

  • Base station transceivers for cellular communication systems
  • RF power amplifiers for GSM, CDMA, and LTE networks
  • Industrial, scientific, and medical (ISM) applications
  • Professional mobile radio systems
  • General-purpose RF power amplifier applications

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The MRF5S9070NR1 is no exception, as it is rigorously tested and certified to ensure optimal performance and longevity. Customers can trust this RF power transistor to deliver consistent, high-quality results in their RF power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $30.2541 $60.5082
5+ $24.8244 $124.1220
8+ $24.0483 $192.3864
10+ $23.2733 $232.7330
13+ $22.4971 $292.4623
18+ $20.1698 $363.0564
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Availability: 2,200 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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