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MRF7S15100HSR3

Part No MRF7S15100HSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.51GHZ NI780S  /  RF Mosfet LDMOS 28 V 600 mA 1.51GHz 19.5dB 23W NI-780S
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type LDMOS
Frequency 1.51GHz
Gain 19.5dB
Voltage - Test 28 V
Current - Test 600 mA
Power - Output 23W
Voltage - Rated 65 V
Package / Case NI-780S
Supplier Device Package NI-780S
Base Product Number MRF7
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 935317045128
Standard Package 250
Win Source Part Number 1232553-MRF7S15100HSR3
Ultra Librarian 3D Model Ultra Librarian MRF7S15100HSR3 CAD Model

Description

The MRF7S15100HSR3 from NXP Semiconductors is a high-performance RF power LDMOS transistor designed for a broad range of applications, including broadcast, commercial, aerospace, and military systems. This device is part of NXP's renowned MRFS series, which is known for its high efficiency, reliability, and thermal performance.

Key Features

  • Frequency Range: The MRF7S15100HSR3 operates at a frequency range of 1.8 to 2.0 GHz, making it suitable for various wireless applications, including LTE, GSM, and CDMA cellular base stations.
  • High Output Power: With a high output power of 100 W CW, this LDMOS transistor can deliver the power needed for demanding communication systems.
  • High Gain: It offers high gain performance, typically 18 dB, which ensures efficient signal amplification.
  • High Efficiency: The device boasts a high efficiency of 60%, reducing power consumption and heat dissipation, which is crucial for maintaining the longevity and reliability of the system.
  • Ruggedness: It is designed to withstand a high voltage standing wave ratio (VSWR) of 10:1 at 28 V, which indicates its robustness and ability to handle mismatched loads.
  • Integrated ESD Protection: The MRF7S15100HSR3 comes with integrated ESD protection, ensuring the device remains safe from electrostatic discharges during handling and operation.
  • Thermally Enhanced Package: The transistor is housed in a thermally enhanced package, which provides exceptional thermal stability and ensures optimal performance even under high-temperature conditions.

Applications

The versatility of the MRF7S15100HSR3 makes it an ideal choice for a wide array of applications. It is commonly used in:

  • Base station applications for cellular communication networks
  • Broadcast transmitters for radio and television
  • Industrial, scientific, and medical (ISM) applications
  • Aerospace and defense systems requiring high-power RF signals

With its combination of high power, efficiency, and ruggedness, the MRF7S15100HSR3 from NXP Semiconductors is a reliable choice for system designers looking to enhance their RF signal chain performance.

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