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MRF7S21210HSR3

Part No MRF7S21210HSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 2.17GHZ NI-780S
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity LDMOS
Frequency 2.17GHz
Gain 18.5dB
Voltage - Test 28V
Current - Test 1.4A
Power - Output 63W
Voltage Rating 65V
Case / Package NI-780S
Win Source Part Number 1079752-MRF7S21210HSR3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MRF7S21210HSR3 CAD Model

Description

Product Overview: MRF7S21210HSR3 from NXP

The MRF7S21210HSR3 is a high-performance Radio Frequency (RF) LDMOS transistor designed by NXP Semiconductors, a leader in the field of high-power amplification. This RF power transistor is specifically engineered for broadband applications, making it an ideal choice for a wide range of commercial, aerospace, and defense communication systems.

Key Features

  • Frequency Range: The MRF7S21210HSR3 operates over a broad frequency range of 1805 to 2170 MHz, catering to various high-frequency applications, including LTE, W-CDMA, and other wireless communication standards.
  • High Output Power: With an ability to deliver a high output power of 10 W, this device ensures robust signal amplification, which is critical for maintaining clear communication over long distances.
  • High Gain: It features a high gain of 17.3 dB, which allows for efficient signal amplification with minimal additional components required in the signal chain.
  • High Efficiency: The MRF7S21210HSR3 boasts an impressive efficiency of 32%, reducing power loss and heat generation, thereby enhancing the overall reliability and lifespan of the system.
  • Integrated ESD Protection: The device includes integrated Electrostatic Discharge (ESD) protection, safeguarding the transistor against sudden voltage spikes and enhancing its durability.

Applications

The MRF7S21210HSR3's versatility allows it to be used in a variety of applications, including but not limited to:

  • Base station applications for mobile radio
  • Industrial, scientific, and medical (ISM) applications
  • RF power amplifiers for LTE and W-CDMA
  • Aerospace and defense communication systems

Quality and Reliability

NXP's commitment to quality is evident in the MRF7S21210HSR3, which is manufactured to the highest standards to ensure consistent performance and reliability. The device's robustness is suitable for both commercial and rugged environments, making it a dependable choice for mission-critical applications.

Whether you're developing a high-power amplifier for a cellular base station or a complex communication system for aerospace applications, the MRF7S21210HSR3 from NXP provides the power, efficiency, and reliability required to meet your needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.7172 $64.3032
14+ $8.7942 $123.1188
21+ $8.5193 $178.9053
29+ $8.2444 $239.0876
37+ $7.9695 $294.8715
49+ $7.1448 $350.0952
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Availability: 5,590 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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