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MRF7S38010HR3

Part No MRF7S38010HR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 3.6GHZ NI-400 / Trans RF MOSFET N-CH 65V 3-Pin NI-400-240 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 3.4GHz ~ 3.6GHz
Gain 15dB
Voltage - Test 30V
Current - Test 160mA
Power - Output 2W
Voltage Rating DC 65V
Package NI-400-240
Manufacturer Package NI-400-240
Win Source Part Number 789456-MRF7S38010HR3
Popularity Medium
Supply and Demand Status Limited
Family Name MRF7S38010H
Introduction Date June 27, 2007
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF7S38010HR3 CAD Model

Description

The MRF7S38010HR3 is a high-performance RF power transistor designed by NXP Semiconductors. This advanced LDMOS transistor is specifically engineered for broadband commercial and industrial applications with frequencies ranging from 1.8 to 2.0 GHz. The device is well-suited for applications such as wireless infrastructure, broadcast, and various other RF power amplification needs.

At the core of the MRF7S38010HR3's design is its capability to deliver exceptional performance with high gain, efficiency, and reliability. The transistor offers a typical output power of 10 Watts with a gain of 17 dB and an efficiency of 35% at 1.9 GHz. This makes it an excellent choice for systems that require a compact, high-power solution with minimal energy consumption.

One of the key features of the MRF7S38010HR3 is its ruggedness. It can withstand a load mismatch equivalent to a VSWR (Voltage Standing Wave Ratio) of 10:1 at 28 Vdc, ensuring it can handle tough operating conditions without failure. Additionally, the device is characterized and performance is guaranteed over the temperature range of -30°C to +85°C, providing reliable operation in a wide range of environmental conditions.

The transistor is housed in a RoHS compliant, over-molded plastic package that offers excellent thermal stability and is designed for linear and pulsed applications. The MRF7S38010HR3 is part of NXP's high-reliability product portfolio, undergoing rigorous testing and quality control measures to ensure it meets the highest industry standards.

For ease of integration, the MRF7S38010HR3 is internally matched to 50 Ohms, simplifying the circuit design process for engineers. It also features integrated ESD protection, safeguarding the device from electrostatic discharge events during handling and operation.

Overall, the MRF7S38010HR3 from NXP Semiconductors is a robust and efficient solution for designers seeking to optimize their RF power applications. With its combination of high power, efficiency, and ruggedness, this transistor is poised to deliver top-notch performance in a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $47.9302 $95.8604
3+ $39.3266 $117.9798
5+ $38.0977 $190.4885
7+ $36.8688 $258.0816
9+ $35.6398 $320.7582
11+ $31.9531 $351.4841
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Availability: 7,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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