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MRF8S9120NR3

Part No MRF8S9120NR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Trans RF MOSFET N-CH 70V 3-Pin Case 2021-0 T/R / FET RF 70V 960MHZ QM780-2
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Active
Transistor Polarity LDMOS
Frequency 960MHz
Gain 19.8dB
Voltage - Test 28V
Current - Test 800mA
Power - Output 33W
Voltage Rating 70V
Case / Package OM-780-2
Win Source Part Number 1079779-MRF8S9120NR3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name MRF8S9120N
Introduction Date September 09, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian MRF8S9120NR3 CAD Model

Description

Product Overview: MRF8S9120NR3

The MRF8S9120NR3 is a high-performance RF power transistor from NXP Semiconductors, designed to meet the demands of commercial and industrial applications. This device is part of NXP's renowned RF power LDMOS transistor family, which is well-known for its high efficiency, reliability, and thermal performance.

Key Features

  • Frequency Range: The MRF8S9120NR3 is optimized for broadband operations, covering a wide frequency range that makes it suitable for various applications, including but not limited to wireless infrastructure, broadcast, and aerospace.
  • High Output Power: With an ability to deliver up to 120W of continuous wave power, this transistor can handle significant power levels, making it ideal for high-power amplifiers.
  • High Gain: The device offers a high gain of typically 18 dB, ensuring that signal strength is significantly amplified for effective transmission and reception.
  • Efficiency: The MRF8S9120NR3 boasts an excellent efficiency rate, which helps in reducing the thermal load and improving the overall system performance.
  • Thermal Performance: Built with an advanced LDMOS technology, this transistor has an outstanding thermal performance, which ensures stability and longevity even under stressful conditions.
  • Integrated ESD Protection: Electrostatic discharge protection is integrated into the device to prevent damage from static electricity, enhancing its durability.

Applications

The versatility of the MRF8S9120NR3 allows it to be used in a variety of applications. It is particularly well-suited for RF power amplifiers in cellular base station equipment, supporting various communication standards. Additionally, it can be utilized in broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as in RF energy and plasma generation. The robustness and performance of the MRF8S9120NR3 make it a solid choice for designers looking for a reliable RF power solution.

Quality and Support

NXP Semiconductors is committed to delivering high-quality products, and the MRF8S9120NR3 is no exception. Customers can expect comprehensive technical support and documentation to ensure seamless integration into their systems. With its impressive features and backed by NXP's reputation, the MRF8S9120NR3 is an excellent choice for any high-power RF application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $40.6657 $81.3314
4+ $33.3667 $133.4668
6+ $32.3240 $193.9440
8+ $31.2813 $250.2504
10+ $30.2386 $302.3860
13+ $27.1105 $352.4365
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* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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