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MRF9080LR5

Part No MRF9080LR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 960MHZ NI-780 / Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 960MHz
Gain 18.5dB
Voltage - Test 26V
Current - Test 600mA
Power - Output 70W
Voltage Rating DC 65V
Package NI-780
Manufacturer Package NI-780
Win Source Part Number 789470-MRF9080LR5
Popularity Medium
Supply and Demand Status Limited
Family Name MRF9080L
Introduction Date March 11, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF9080LR5 CAD Model

Description

NXP MRF9080LR5 RF Power Transistor

The MRF9080LR5 is a high-performance RF power transistor from the renowned semiconductor manufacturer, NXP Semiconductors. This device is specifically designed for broadband commercial and industrial applications with frequencies ranging from 1.8 to 600 MHz. The MRF9080LR5 is part of NXP's RF power LDMOS transistor family, which is well-known for its high efficiency, gain, and ruggedness in operation.

The MRF9080LR5 is capable of delivering a powerful output of up to 80 Watts CW over its operating frequency range. This makes it an excellent choice for a wide array of applications, including but not limited to, broadcast transmitters, cellular base stations, industrial RF heating, and medical MRI systems. Its robust design ensures reliable performance even under the most demanding conditions.

One of the key features of the MRF9080LR5 is its high gain, which typically stands at 18 dB. This high gain facilitates better signal amplification, ensuring clear and strong communication signals. Moreover, the device boasts a high efficiency of up to 55%, which helps in minimizing thermal issues and reducing the overall power consumption, making it an environmentally friendly option for energy-conscious designs.

The MRF9080LR5 is constructed using NXP's advanced LDMOS technology, which offers excellent thermal stability and a wide safety margin. The transistor is housed in a rugged ceramic package that provides outstanding reliability and a long service life. Additionally, the package includes an integrated ESD protection mechanism, which safeguards the device against electrostatic discharge events, further enhancing its durability.

Installation and integration of the MRF9080LR5 into RF circuits are simplified thanks to its excellent broadband performance, which reduces the need for additional tuning components. Designers can take advantage of the transistor's features to create compact and efficient RF power amplifiers without compromising on performance.

In summary, the NXP MRF9080LR5 is a versatile and robust RF power transistor that delivers exceptional performance for a variety of high-frequency applications. Its combination of power, efficiency, and reliability makes it a top choice for engineers looking to develop cutting-edge RF solutions.

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